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MGP11N60E

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MGP11N60ED

SHORTCIRCUITRATEDLOWON-VOLTAGE

InsulatedGateBipolarTransistorwithAnti-ParallelDiode N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–block

ONSEMION Semiconductor

安森美半导体安森美半导体公司

OM11N60

POWERMOSFETINHERMETICISOLATED

[Omnirel] DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperat

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

OM11N60SA

POWERMOSFETINHERMETICISOLATED

[Omnirel] DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperat

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

OM11N60SA

POWERMOSFETINHERMETICISOLATED

DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperation).They

IRF

International Rectifier

PCFC11N60W

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

PSM11N60CT

11A600VSingleN-ChannelPowerMOSFET

PFC

PFC Device Inc.

PSM11N60CTF

11A600VSingleN-ChannelPowerMOSFET

PFC

PFC Device Inc.

SIHH11N60E

Reducedswitchingandconductionlosses

VishayVishay Siliconix

威世科技威世科技半导体

SIHH11N60E

ESeriesPowerMOSFET

FEATURES •Fullylead(Pb)-freedevice •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Kelvinconnectionforreducedgatenoise •Materialcategorization:fordefinit

VishayVishay Siliconix

威世科技威世科技半导体

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
24+
TO-220F
34
只做原厂渠道 可追溯货源
询价
onsemi(安森美)
24+
TO-220F
7828
支持大陆交货,美金交易。原装现货库存。
询价
ON/安森美
SMD
23+
6000
专业配单原装正品假一罚十
询价
FAIRCHILD
24+
TO-220F
8866
询价
FSC进口原
17+
TO-220F
6200
询价
FAIRCHI
21+
TO-220F
12588
原装正品,自己库存 假一罚十
询价
FAIRCHILD/仙童
22+
TO220F
27433
原装正品现货
询价
三年内
1983
只做原装正品
询价
FAIRCHILD
24+
TO-220F
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!
询价
FSC/ON
23+
原包装原封 □□
547
原装进口特价供应 特价,原装元器件供应,支持开发样品 更多详细咨询 库存
询价
更多FCPF11N60T供应商 更新时间2025-7-18 16:36:00