ISPP11N60CFD

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.44Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISPW11N60CFD

iscN-ChannelMOSFETTransistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤440mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

IXFH11N60

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXFM11N60

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

KP11N60D

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisSuperJunctionMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES •VDSS=600V,I

KP11N60F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisSuperJunctionMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES •VDSS=600V,I

KPS11N60D

ThisSuperJunctionMOSFEThasbettercharacteristics

KPS11N60F

ThisSuperJunctionMOSFEThasbettercharacteristics

KSM11N60

Loweffectiveoutputcapacitance

MDF11N60

N-ChannelMOSFET600V,11A,0.55(ohm)