KP11N60D

N CHANNEL MOS FIELD EFFECT TRANSISTOR

GeneralDescription ThisSuperJunctionMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES •VDSS=600V,I

KP11N60D_15

N CHANNEL MOS FIELD EFFECT TRANSISTOR

KP11N60F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisSuperJunctionMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES •VDSS=600V,I

KPS11N60D

ThisSuperJunctionMOSFEThasbettercharacteristics

KPS11N60F

ThisSuperJunctionMOSFEThasbettercharacteristics

KSM11N60

Loweffectiveoutputcapacitance

MDF11N60

N-ChannelMOSFET600V,11A,0.55(ohm)

MDF11N60TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

MDF11N60TH

N-ChannelMOSFET600V,11A,0.55(ohm)

MDFS11N60

N-ChannelMOSFET600V,11A,0.55(ohm)