丝印：FCPF11N60T；Package：TO-220F；N-Channel SuperFET® MOSFET

General Description SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction

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安森美半导体

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

General Description

General Description SuperFET™ is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction los

文件：574.49 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

功率 MOSFET，N 沟道，SUPERFET®, Easy Drive，600 V，11 A，380 mΩ，TO-220F

SuperFET® MOSFET 是 Fairchild Semiconductor 的第一代高压超结 (SJ) MOSFET 系列，利用电荷平衡技术实现出色的低导通电阻，以及更低门极电荷方面的卓越性能。此技术专用于最大程度降低导电损耗，提供卓越的开关性能、dv/dt 速率和更高的雪崩能量。因此，SuperFET MOSFET 非常适用于开关电源应用，如 PFC、服务器/电信电源、FPD TV 电源、ATX 电源和工业电源应用。 •650V @Tj = 150°C\n•典型值 Rds(on) = 0.32 Ω\n•超低栅极电荷（典型值 Qg=40nC)\n•低有效输出电容（典型值 Coss.eff=95pF)\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准;

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安森美半导体