丝印：FCPF250N65S3；Package：TO-220F；MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 12 A, 250 m

Description SUPERFET III MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides supe

文件：310.88 Kbytes 页数：10 Pages

ONSEMI

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丝印：FCPF250N65S3R0；Package：TO-220F；MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 12 A, 250 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pro

文件：312.62 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：FCPF260N60E；Package：TO-220F；MOSFET – N-Channel, SUPERFET II 600 V, 15 A, 260 m

Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide super

文件：268.69 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：FCPF260N65F；Package：TO-220F；MOSFET – N-Channel, SUPERFET II, FRFET 650 V, 15 A, 260 m

Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, prov

文件：299.31 Kbytes 页数：10 Pages

ONSEMI

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丝印：FCPF360N65S3R0；Package：TO-220F；MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 10 A, 360 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pro

文件：323.93 Kbytes 页数：10 Pages

ONSEMI

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丝印：FCPF380N60E；Package：TO-220F；MOSFET – N-Channel, SUPERFET II 600 V, 10.2 A, 380 m

Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide super

文件：263.74 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：FCPF380N60；Package：TO-220F；MOSFET – N-Channel, SUPERFET II 600 V, 10.2 A, 380 m

Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide super

文件：253.6 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：FCPF380N65F；Package：TO-220F；MOSFET – N-Channel, SUPERFET II, FRFET 650 V, 10.2 A, 380 m

Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, prov

文件：317.85 Kbytes 页数：10 Pages

ONSEMI

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丝印：FCPF400N80Z；Package：TO-220F；MOSFET – N-Channel, SUPERFET II 800 V, 11 A, 400 m

Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide super

文件：303.92 Kbytes 页数：10 Pages

ONSEMI

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丝印：FCPF600N60Z；Package：TO-220F；MOSFET – N-Channel, SUPERFET II 600 V, 7.4 A, 600 m

Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide super

文件：294.41 Kbytes 页数：10 Pages

ONSEMI

安森美半导体