Stable Stacked Metallized Film (PPS) Chips for Reflow Soldering

文件：291.02 Kbytes 页数：8 Pages

CDE

丝印：FCP11N60；Package：TO-220；N-Channel SuperFET® MOSFET

General Description SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction

文件：1.95087 Mbytes 页数：12 Pages

ONSEMI

安森美半导体

丝印：FCP20N60；Package：TO-220；N-Channel SuperFET® MOSFET 600 V, 20 A, 190 mΩ

Features • 650V @ TJ = 150°C • Typ. RDS(on) = 150 mΩ • Ultra Low Gate Charge (Typ. Qg = 75 nC ) • Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF ) • 100% Avalanche Tested Applications • Solar Inverter • AC-DC Power Supply Description SuperFET® MOSFET is Fairchild Semi

文件：632.6 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

丝印：FCP360N65S3R0；Package：TO-220；MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 10 A, 360 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pro

文件：430.32 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：FCPF11N60；Package：TO-220F；N-Channel SuperFET® MOSFET

General Description SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction

文件：1.95087 Mbytes 页数：12 Pages

ONSEMI

安森美半导体

丝印：FCPF11N60F；Package：TO-220F；N-Channel SuperFET® FRFET® MOSFET 600 V, 11 A, 380 mΩ

Features • 600 V @ TJ = 150°C • Typ. RDS(on) = 320 mΩ • Fast Recovery Type (trr = 120 ns) • Ultra Low Gate Charge (Typ. Qg = 40 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF) • 100% Avalanche Tested • RoHS compliant Applications • LCD/LED/PDP TV • Solar Inverter

文件：470.65 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：FCPF11N60T；Package：TO-220F；N-Channel SuperFET® MOSFET

General Description SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction

文件：1.95087 Mbytes 页数：12 Pages

ONSEMI

安森美半导体

丝印：FCPF190N60E；Package：TO-220F；MOSFET – N-Channel, SUPERFET II 600 V, 20.6 A, 190 m

Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide super

文件：254.7 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：FCPF190N60；Package：TO-220F；N-Channel SuperFET® II MOSFET 600 V, 20.2 A, 199 mΩ

Description SuperFET®II MOSFET is ON Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resis-tance and lower gate charge performance. This advanced tech-nology is tailored to minimize conductio

文件：1.20667 Mbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：FCPF190N60；Package：TO-220F；MOSFET – N-Channel, SUPERFET II 600 V, 20.2 A, 199 m

Description SUPERFET II MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch

文件：160.19 Kbytes 页数：9 Pages

ONSEMI

安森美半导体