丝印：FCD4N60；Package：D-PAK；N-Channel SuperFET® MOSFET 600 V, 3.9 A, 1.2 Ω

Features • 650 V @TJ = 150 °C • Typ. RDS(on) = 1.0  • Ultra Low Gate Charge (Typ. Qg = 12.8 nC) • Low Effective Output Capacitance (Typ. Coss.eff = 32 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Lighting • AC-DC Power Supply • Solar Inverter Description SuperFE

文件：540.47 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：FCD4N60；Package：D-PAK；N-Channel SuperFET® MOSFET 600 V, 3.9 A, 1.2 Ω

Features • 650 V @TJ = 150 °C • Typ. RDS(on) = 1.0  • Ultra Low Gate Charge (Typ. Qg = 12.8 nC) • Low Effective Output Capacitance (Typ. Coss.eff = 32 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Lighting • AC-DC Power Supply • Solar Inverter Description SuperFE

文件：540.47 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：352.64 Kbytes 页数：2 Pages

ISC

无锡固电

600V N-Channel MOSFET

Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, pro

文件：972.05 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

N-Channel SuperFET® MOSFET 600 V, 3.9 A, 1.2 Ω

Features • 650 V @TJ = 150 °C • Typ. RDS(on) = 1.0  • Ultra Low Gate Charge (Typ. Qg = 12.8 nC) • Low Effective Output Capacitance (Typ. Coss.eff = 32 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Lighting • AC-DC Power Supply • Solar Inverter Description SuperFE

文件：540.47 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

600V N-Channel MOSFET

Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, pro

文件：972.05 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

600V N-Channel MOSFET

Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, pro

文件：972.05 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FAIRCHILD

仙童半导体