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AFGB20N60SFD

Usingnovelfield−stopIGBTtechnology

Features •HighCurrentCapability •LowSaturationVoltage:VCE(sat)=2.2V@IC=20A •HighInputImpedance •FastSwitching •AEC−Q101QualifiedtoAutomotiveRequirements •TheseDevicesarePb−FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

AFGB20N60SFD-BW

Usingnovelfield−stopIGBTtechnology

Features •HighCurrentCapability •LowSaturationVoltage:VCE(sat)=2.2V@IC=20A •HighInputImpedance •FastSwitching •AEC−Q101QualifiedtoAutomotiveRequirements •TheseDevicesarePb−FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

AIKB20N60CT

LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryanti-paralleldiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AIKP20N60CT

LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlleddiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AIKW20N60CT

LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryantiparallelEmitterControlleddiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AOK20N60

600V,20AN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOK20N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.37Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOK20N60L

600V,20AN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOK20N60L

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT20N60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT20N60

600V,20AN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOTF20N60

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

AOTF20N60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOTF20N60

600V,20AN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

APT20N60BCF

SuperJunctionFREDFET

ADPOW

Advanced Power Technology

APT20N60BCFG

SuperJunctionFREDFET

ADPOW

Advanced Power Technology

APT20N60SCF

SuperJunctionFREDFET

ADPOW

Advanced Power Technology

APT20N60SCFG

SuperJunctionFREDFET

ADPOW

Advanced Power Technology

BIDW20N60T

BIDW20N60TInsulatedGateBipolarTransistor(IGBT)

GeneralInformation TheBourns®ModelBIDW20N60TIGBTdevicecombinestechnologyfromaMOSgate andabipolartransistorforanoptimumcomponentforhighvoltageandhighcurrent applications.ThisdeviceusesTrench-GateField-Stoptechnologyprovidinggreater controlofdynamiccharacteris

BournsBourns Inc.

伯恩斯(邦士)

BRA20N60

N-CHANNELMOSFETinaTO-262PlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

详细参数

  • 型号:

    FCB20N60

  • 制造商:

    Fairchild Semiconductor Corporation

  • 功能描述:

    MOSFET N D2-PAK

  • 功能描述:

    MOSFET, N, D2-PAK

  • 功能描述:

    MOSFET, N CH, 600V, 20A, TO-263; Transistor Polarity

供应商型号品牌批号封装库存备注价格
FAIRCHILD
23+
TO-2632L(D2PAK)
12300
全新原装真实库存含13点增值税票!
询价
FAIRCHILD
23+
TO-263
11000
全新原装
询价
FAIRCHILD
08+(pbfree)
TO-263(D2PAK)
8866
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FSC
1735+
TO263
6528
科恒伟业!只做原装正品!假一赔十!
询价
FAIRCHIL
23+
TO-263
90000
一级代理商进口原装现货、价格合理
询价
FAIRCHI
21+
TO-263
12588
原装正品,自己库存 假一罚十
询价
23+
N/A
30350
正品授权货源可靠
询价
FSC
18+
TO-263
41200
原装正品,现货特价
询价
FAIRCHILD/仙童
20+
TO-2632L(D2PAK)
36900
原装优势主营型号-可开原型号增税票
询价
更多FCB20N60供应商 更新时间2024-5-16 15:30:00