General Information

The Bourns® Model BIDW20N60T IGBT device combines technology from a MOS gate

and a bipolar transistor for an optimum component for high voltage and high current

applications. This device uses Trench-Gate Field-Stop technology providing greater

control of dynamic characteristics with a lower conduction loss and fewer switching

losses. In addition, this structure provides a positive temperature coefficient.

Features

600 V, 20 A, Low Collector-Emitter

Saturation Voltage (VCE(sat))

Trench-Gate Field-Stop technology

Optimized for conduction

Low switching loss

RoHS compliant*

Applications

Switch-Mode Power Supplies (SMPS)

Uninterruptible Power Sources (UPS)

Power Factor Correction (PFC)

Stepper motors

BIDW20N60T属于分立半导体产品 > 晶体管 - UGBT、MOSFET - 单。伯恩斯（邦士）制造生产的BIDW20N60T晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。