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FCB20N60

600V N-Channel MOSFET

Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCB20N60

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCB20N60

600V N-Channel MOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCB20N60_F085

N-Channel MOSFET

Description SuperFETTMisFairchild’sproprietarynewgenerationofhighvoltageMOSFETsutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,providesuperio

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCB20N60F

600V N-CHANNEL FRFET

Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCB20N60F

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCB20N60FTM

600V N-CHANNEL FRFET

Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCB20N60FTM

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCB20N60TM

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCB20N60_05

600V N-Channel MOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCB20N60F_12

600V N-Channe MOSFET 600V, 20A, 190m廓

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

20N60

20A,600VN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC20N60isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

20N60

FastSwitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

20N60

N-Channel650-V(D-S)SuperJunctionMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

20N60A

20A600VN-channelenhancedfieldeffecttransistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

20N60B

HiPerFASTIGBT

VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features •InternationalstandardpackagesJEDECTO-268surfacemountableandJEDECTO-247AD •Highcurrenthandlingcapability •LatestgenerationHDMOSTMprocess •MOSGateturn-on -drivesimplicity

IXYS

IXYS Integrated Circuits Division

20N60CFD

HITACHIEncapsulation,DIP16

HitachiHitachi, Ltd.

日立公司

20N60CFD

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

20N60CFD

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnologyExtremedv/dtrated

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

20N60CFD

CoolMOSPowerTransistor

Features •Newrevolutionaryhighvoltagetechnology •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Periodicavalancherated •Qualifiedforindustrialgradeapplicationsaccording

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

详细参数

  • 型号:

    FCB20N60

  • 制造商:

    Fairchild Semiconductor Corporation

  • 功能描述:

    MOSFET N D2-PAK

  • 功能描述:

    MOSFET, N, D2-PAK

  • 功能描述:

    MOSFET, N CH, 600V, 20A, TO-263; Transistor Polarity

供应商型号品牌批号封装库存备注价格
FAIRCHILD
23+
TO-2632L(D2PAK)
12300
全新原装真实库存含13点增值税票!
询价
FAIRCHILD
23+
TO-263
11000
全新原装
询价
FAIRCHILD
08+(pbfree)
TO-263(D2PAK)
8866
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FSC
1735+
TO263
6528
科恒伟业!只做原装正品!假一赔十!
询价
FAIRCHIL
23+
TO-263
90000
一级代理商进口原装现货、价格合理
询价
FAIRCHI
21+
TO-263
12588
原装正品,自己库存 假一罚十
询价
23+
N/A
30350
正品授权货源可靠
询价
FSC
18+
TO-263
41200
原装正品,现货特价
询价
FAIRCHILD/仙童
20+
TO-2632L(D2PAK)
36900
原装优势主营型号-可开原型号增税票
询价
更多FCB20N60供应商 更新时间2024-4-29 15:30:00