FAJAE-414规格书供应代理安费诺集团第3页-114ic电子网

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AOU414	文件：352.84 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=85A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5.7mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOU414L	文件：69.31 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOU414usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),shoot-throughimmunityandbodydiodecharacteristics.ThisdeviceisideallysuitedforuseasalowsideswitchinCPUcorepowerconversion.StandardProductAOU414isPb-free(meetsROHS&Sony25	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AQV414	文件：168.96 Kbytes Page：2 Pages	HIGHVOLTAGE,PHOTOMOSRELAY	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
AQV414	文件：157.89 Kbytes Page：2 Pages	HIGHVOLTAGE,PHOTOMOSRELAY	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
AQV414	文件：76.22 Kbytes Page：3 Pages	Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit	PanasonicPanasonic Corporation 松下松下电器	Panasonic
AQV414A	文件：76.22 Kbytes Page：3 Pages	Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit	PanasonicPanasonic Corporation 松下松下电器	Panasonic
AQV414A	文件：168.96 Kbytes Page：2 Pages	HIGHVOLTAGE,PHOTOMOSRELAY	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
AQV414AX	文件：76.22 Kbytes Page：3 Pages	Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit	PanasonicPanasonic Corporation 松下松下电器	Panasonic
AQV414AZ	文件：76.22 Kbytes Page：3 Pages	Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit	PanasonicPanasonic Corporation 松下松下电器	Panasonic
AQV414E	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQV414EA	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQV414EAX	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQV414EAZ	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQV414EH	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQV414EHA	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQV414EHAX	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQV414EHAZ	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQV414S	文件：157.89 Kbytes Page：2 Pages	HIGHVOLTAGE,PHOTOMOSRELAY	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
AQW414	文件：39.54 Kbytes Page：2 Pages	GU(GeneralUse)Type[2-Channel(FormB)Type]	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
AQW414	文件：169.72 Kbytes Page：2 Pages	HIGHVOLTAGE,PHOTOMOSRELAY	etc2List of Unclassifed Manufacturers etc2未分类制造商	etc2

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市柯尔基电子有限公司	FAJF6810A	FAIRCHIL	23+24	TO3P	28950	原装现货.优势热卖.终端BOM表可配单	询价
深圳市博浩通科技有限公司	FAJNA80C	进口原装	23+	SOP-8	1078	优势库存	询价
深圳市大联智电子有限公司	FAJNA80C	N/A	2022+	SOP-8	5000	只售进口原装公司现货!	询价
深圳市勤思达科技有限公司	FAJWA	N/A	23+	SOP8	1700		询价
深圳市芯诚实创科技有限公司	FAJWA		2022	SOP8	156	全新原装现货热卖	询价
深圳市威尔健半导体有限公司	FAJWA	三凌	23+	SOP-8	50000	全新原装正品现货,支持订货	询价
深圳市恒达亿科技有限公司	FAJWA	N/A	23+	SOP8	3000	全新原装、诚信经营、公司现货销售	询价
贸泽芯城（深圳）电子科技有限公司	FAJWA	三凌	21+ROHS	SOP-8	10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市特莱科技有限公司	FAJWA	三凌MITSUMI	22+21+	SOP-8	6000	16年电子元件现货供应商终端BOM表可配单提供样品	询价
深圳市得捷芯城科技有限公司	FAJWA	三凌	23+	NA/	9250	原装现货,当天可交货,原型号开票	询价

更多FAJAE-414供应商更新时间2024-5-15 10:18:00

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