FAJAE-434资料datasheet下载原装现货安费诺-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
FAJAE-434	文件：117.17 Kbytes Page：1 Pages	FRJAE ASSEMBLY, 6 POSITION AND 8 POSITION 文件：117.17 Kbytes 页数：1 Pages	AMPHENOL 安费诺	AMPHENOL
FDT434	文件：244.57 Kbytes Page：8 Pages	P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • –5.5 A, 文件：244.57 Kbytes 页数：8 Pages	Fairchild 仙童半导体	Fairchild
FDT434P	文件：244.57 Kbytes Page：8 Pages	P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • –5.5 A, 文件：244.57 Kbytes 页数：8 Pages	Fairchild 仙童半导体	Fairchild
FDT434P-NL	文件：1.00552 Mbytes Page：8 Pages	P-Channel 35 V (D-S) MOSFET 文件：1.00552 Mbytes 页数：8 Pages	VBSEMI 微碧半导体	VBSEMI

更多FAJAE-434供应商更新时间2025-10-13 15:20:00