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AQV414A

Normally closed 6-pin type of 400V load voltage Measuring instruments

FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit

PanasonicPanasonic Corporation

松下松下电器

AQV414A

HIGH VOLTAGE, PHOTO MOS RELAY

ETCList of Unclassifed Manufacturers

未分类制造商

AQV414A

包装:散装 封装/外壳:6-SMD(0.300",7.62mm) 类别:继电器 固态继电器 描述:SSR RELAY DPST-NC 120MA 0-400V

PanasonicElectricWorks

Panasonic Electric Works

AQV414A

包装:散装 封装/外壳:6-SMD(0.300",7.62mm) 类别:继电器 固态继电器 描述:SSR RELAY DPST-NC 120MA 0-400V

PanasonicElectricWorks

Panasonic Electric Works

AQV414AX

Normally closed 6-pin type of 400V load voltage Measuring instruments

FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit

PanasonicPanasonic Corporation

松下松下电器

AQV414AZ

Normally closed 6-pin type of 400V load voltage Measuring instruments

FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit

PanasonicPanasonic Corporation

松下松下电器

AQV414AX

包装:盒 封装/外壳:6-SMD(0.300",7.62mm) 类别:继电器 固态继电器 描述:SSR RELAY DPST-NC 120MA 0-400V

PanasonicElectricWorks

Panasonic Electric Works

AQV414E

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下电器松下电器机电(中国)有限公司

AQV414EA

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下电器松下电器机电(中国)有限公司

AQV414EAX

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下电器松下电器机电(中国)有限公司

AQV414EAZ

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下电器松下电器机电(中国)有限公司

AQV414EH

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下电器松下电器机电(中国)有限公司

AQV414EHA

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下电器松下电器机电(中国)有限公司

AQV414EHAX

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下电器松下电器机电(中国)有限公司

AQV414EHAZ

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下电器松下电器机电(中国)有限公司

AQV414S

HIGHVOLTAGE,PHOTOMOSRELAY

ETCList of Unclassifed Manufacturers

未分类制造商

AQW414

GU(GeneralUse)Type[2-Channel(FormB)Type]

ETCList of Unclassifed Manufacturers

未分类制造商

AQW414

HIGHVOLTAGE,PHOTOMOSRELAY

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

AQW414A

HIGHVOLTAGE,PHOTOMOSRELAY

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

AQW414EH

Generaluseandeconomytype.DIP(2FormB)8-pintype.Reinforcedinsulation5,000Vtype.

FEATURES 1.Reinforcedinsulation5,000Vtype Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.Con-formstoEN41003,EN60950(reinforcedinsulation). 2.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.86×(H)3.2mm(W).252×(L).388×(H).126inch,

PanasonicPanasonic Corporation

松下松下电器

产品属性

  • 产品编号:

    AQV414A

  • 制造商:

    Panasonic Electric Works

  • 类别:

    继电器 > 固态继电器

  • 系列:

    PhotoMOS™ AQV

  • 包装:

    散装

  • 安装类型:

    表面贴装型

  • 电路:

    DPST-NC(2 Form B)

  • 输出类型:

    AC,DC

  • 电压 - 输入:

    1.14VDC

  • 端接样式:

    鸥翼

  • 封装/外壳:

    6-SMD(0.300",7.62mm)

  • 供应商器件封装:

    6-SMD

  • 描述:

    SSR RELAY DPST-NC 120MA 0-400V

供应商型号品牌批号封装库存备注价格
PANASONIC
10000
全新原装 货期两周
询价
20+
DIP
2860
原厂原装正品价格优惠公司现货欢迎查询
询价
NAIS
23+
SOP/6
7000
绝对全新原装!100%保质量特价!请放心订购!
询价
24+
DIP
20
询价
NAIS
06+
SOP6
2000
询价
NAIS
2016+
SOP-6
8880
只做原装,假一罚十,公司可开17%增值税发票!
询价
NAIS
10+
SOP-6
7800
全新原装正品,现货销售
询价
原厂正品
23+
PLCC
5000
原装正品,假一罚十
询价
NAIS
2020+
SOP6
50
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
Panasoni
2339+
SOP6
5650
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
更多AQV414A供应商 更新时间2024-12-7 16:06:00