N-Channel Enhancement Mode Field Effect Transistor

General Description The AOU414 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOU414 is Pb-free (meets ROHS & Sony 25

文件：69.31 Kbytes 页数：5 Pages

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 85A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：352.84 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 53A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 70mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：353.26 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Gen III Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • DC/DC Conversion - System Power

文件：960.85 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOU414 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOU414 is Pb-free (meets ROHS & Sony 25

文件：69.31 Kbytes 页数：5 Pages

AOSMD

万国半导体