F3DF

Marking：F3DF；Package：SMAF；Surface Mount Fast Recovery Rectifier F3AF Through F3MF

Features Lowproillepackage [dealforautomatedplacement Glasspassivatedchipjunction Highforwardsurgecapability Fastreverserecoverytime MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C

F3GF

Marking：F3GF；Package：SMAF；Surface Mount Fast Recovery Rectifier F3AF Through F3MF

Features Lowproillepackage [dealforautomatedplacement Glasspassivatedchipjunction Highforwardsurgecapability Fastreverserecoverytime MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C

F3JF

Marking：F3JF；Package：SMAF；Surface Mount Fast Recovery Rectifier F3AF Through F3MF

Features Lowproillepackage [dealforautomatedplacement Glasspassivatedchipjunction Highforwardsurgecapability Fastreverserecoverytime MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C

F3KF

Marking：F3KF；Package：SMAF；Surface Mount Fast Recovery Rectifier F3AF Through F3MF

Features Lowproillepackage [dealforautomatedplacement Glasspassivatedchipjunction Highforwardsurgecapability Fastreverserecoverytime MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C

F3MF

Marking：F3MF；Package：SMAF；Surface Mount Fast Recovery Rectifier F3AF Through F3MF

Features Lowproillepackage [dealforautomatedplacement Glasspassivatedchipjunction Highforwardsurgecapability Fastreverserecoverytime MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C

FSV340FP

Marking：F34；Package：SOD-123FL；SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed: 250C/10seconds,0.375”(9.5mm)leadl

FSV360FP

Marking：F36；Package：SOD-123FL；SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed: 250C/10seconds,0.375”(9.5mm)leadl

MA477FRCPA

Marking：F3YWX；Package：SOT23-6F；Single Phase Hall Effect Fan Driver

GENERALDESCRIPTION TheMA477FisanintegratedHallsensorwithH-Bridgedoutputdriverdesignedfor brushlessDCmotorapplications.ThedeviceisusingHVBCDprocessincludesanon-chip Hallsensorformagneticsensing,anamplifierthatamplifiestheHallvoltage,acomparatorto provide

PJF3NA80_T0_00001

Marking：F3NA80；Package：ITO-220AB-F；800V N-Channel MOSFET

Features RDS(ON),VGS@10V,ID@1.5A

RFP30N06LE

Marking：F30N06LE；Package：TO-220AB；30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs

Description TheRFP30N06LE,RF1S30N06LEandRF1S30N06LESMareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theywere