RFP30N06LE

Marking：F30N06LE；Package：TO-220AB；30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

SP6201EM5-3-0

Marking：F30；Package：SOT-25；Micropower, 100mA and 200mA CMOS LDO Regulators

DESCRIPTION TheSP6200andSP6201areCMOSLDOsdesignedtomeetabroadrangeofapplicationsthatrequireaccuracy,speedandeaseofuse.TheseLDOsofferextremelylowquiescentcurrentwhichonlyincreasesslightlyunderload,thusprovidingadvantagesingroundcurrentperformanceoverbipo

SP6201EM5-3-3

Marking：F33；Package：SOT-25；Micropower, 100mA and 200mA CMOS LDO Regulators

DESCRIPTION TheSP6200andSP6201areCMOSLDOsdesignedtomeetabroadrangeofapplicationsthatrequireaccuracy,speedandeaseofuse.TheseLDOsofferextremelylowquiescentcurrentwhichonlyincreasesslightlyunderload,thusprovidingadvantagesingroundcurrentperformanceoverbipo

SP6201EM5-3-5

Marking：F35；Package：SOT-25；Micropower, 100mA and 200mA CMOS LDO Regulators

DESCRIPTION TheSP6200andSP6201areCMOSLDOsdesignedtomeetabroadrangeofapplicationsthatrequireaccuracy,speedandeaseofuse.TheseLDOsofferextremelylowquiescentcurrentwhichonlyincreasesslightlyunderload,thusprovidingadvantagesingroundcurrentperformanceoverbipo

STF3NK80Z

Marking：F3NK80Z；Package：TO-220FP；N-CHANNEL 800V - 3.8W - 2.5A TO-220/FP/DPAK/IPAK Zener-Protected SuperMESH??Power MOSFET

Description TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications. Suchse

STF3NK80Z

Marking：F3NK80Z；Package：TO-220FP；N-channel 800 V, 3.8 Ω typ., 2.5 A SuperMESH™ Power MOSFETs in IPAK, DPAK, TO-220FP, TO-220 packages

Features Extremelyhighdv/dtcapability 100avalanchetested Gatechargeminimized Zener-protected Applications Switchingapplications Description ThesehighvoltagedevicesareZener-protected N-channelPowerMOSFETsdevelopedusingthe SuperMESH™technologyby STMicroel

STPS2L30AF

Marking：F30；Package：SMAflat；Low drop power Schottky rectifier

Description SinglechipSchottkyrectifiersdesignedforhighfrequencyminiatureswitchedmodepowersuppliessuchasadaptorsandonboardDC/DCconverters. PackagedinSMA,SMAFlatandSMBFlat,theSTPS2L30isidealforuseinparallelwithMOSFETsinsynchronousrectification. Features •

TPCF8102

Marking：F3B；Package：2-3U1A；Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

NotebookPCApplications PortableEquipmentApplications •Lowdrain-sourceONresistance:RDS(ON)=24mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=14S(typ.) •Lowleakagecurrent:IDSS=−10μA(max)(VDS=−20V) •Enhancementmode:Vth=−0.5to−1.2V

TRSF3221EIRGTR

Marking：F3221；Package：VQFN；TRSF3221E 3V to 5.5V Single-Channel RS-232 1Mbit Line Driver and Receiver With ±15kV IEC ESD Protection in Small Package

1Features •ESDprotectionforRS-232pins –±15kVHuman-bodymodel(HBM) –±8kVIEC61000-4-2Contactdischarge –±15kVIEC61000-4-2Air-gapdischarge •Operateswith3Vto5.5VVCCsupply •Operatesupto1Mbit/s –Low-speedpin-compatibledevice(250kbit/s)– TRS3221E •Availablein

TRSF3232EIRGTR

Marking：F3232；Package：VQFN；TRSF3232E 3V TO 5.5V Two-Channel RS-232 1Mbit/s Line Driver and Receiver with ±15kV IEC ESD Protection in Small Package

1Features •Operateswith3Vto5.5VVCCsupply •Operatesupto1Mbit/s •Lowsupplycurrent:300μAtypical •Externalcapacitors:4×0.1μF •Accept5Vlogicinputwith3.3Vsupply •Latch-upperformanceexceeds100mAPerJESD 78,classII •ESDprotectionforRS-232pins –±15kVHuman