丝印：F10；Package：SOT-25；IttyBitty??Integrated High-Side Switch Preliminary Information

General Description The MIC2514 is an integrated high-side power switch that consists of a TTL compatible input and protected P channel MOSFET. The MIC2514 can be used instead of a separate high-side driver and MOSFET in many low voltage applications. Features •MOSFET on-resistance –

文件：44.89 Kbytes 页数：5 Pages

MICREL

麦瑞半导体

丝印：F10；Package：SOT-25；IttyBitty Integrated High-Side Switch

文件：177.87 Kbytes 页数：6 Pages

MICREL

麦瑞半导体

丝印：F10；Package：SOT-25；IttyBitty Integrated High-Side Switch

文件：177.87 Kbytes 页数：6 Pages

MICREL

麦瑞半导体

丝印：F10；Package：TO277B；Super Barrier Rectifier Schottky Diode

文件：1.98966 Mbytes 页数：9 Pages

FUTUREWAFER

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

文件：37.46 Kbytes 页数：2 Pages

POLYFET

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. PolyfetTM process features gold metal for greatly extended

文件：37.65 Kbytes 页数：2 Pages

POLYFET

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended life

文件：38.32 Kbytes 页数：2 Pages

POLYFET

Fuse Blocks and Clips - For 3AG Fuses

Fuse Blocks and Clips - For 3AG Fuses 3AG Screw Terminal Laminated Base Type

文件：660.66 Kbytes 页数：4 Pages

LITTELFUSE

力特

Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

• Advanced Process Technology • Ultra Low On-Resistance • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex

文件：195.51 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A??

VDSS = 55V RDS(on) = 11mΩ ID = 85A‡ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

文件：211.92 Kbytes 页数：8 Pages

IRF