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PFFM101

Marking:F1;Package:SMA/DO-214AC;SURFACE MOUNT GLASS PASSIVATED

PACELEADERPACELEADER INDUSTRIAL

霈峰霈峰实业有限公司

PFFM101-M

Marking:F1;Package:SOD-123-L;1.0A Surface Mount Fast Recovery Rectifiers -50V - 1000V

PACELEADERPACELEADER INDUSTRIAL

霈峰霈峰实业有限公司

YJQ3622A

Marking:F1;Package:DFN3333;N-Channel Enhancement Mode Field Effect Transistor

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

2SC2223

Marking:F12;Package:SOT-23;NPN-General use transistor

NPN-Generalusetransistor225mW50m20V Qualitylevelandexecutivestandard ◆“G”level QZJ840611Q/FRQZJ123-2007 ◆theⅡlevelofnationalstandard GB4589.1-89GB/T12560-1999Q/FR124-2007 Applications:Canbeusedforswitchingandamplifyingin variousele

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

AO6601

Marking:F14LU;Package:SOT23-6;N P Channel MOSFET

GeneralDescription TheAO6601usesadvancedtrenchtechnologyto provideexcellentRDS(ON)andlowgatecharge.The complementaryMOSFETsformahigh-speedpower inverter,suitableforamultitudeofapplications. Features N-Ch: VDS(V)=30V RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

AO6601

Marking:F14L;Package:SOT23-6;N P Channel MOSFET

Features N-Ch: *VDS(V)=30V *ID=3.4A(VGS=10V) *RDS(ON)60m(VGS=10V) *RDS(ON)70m(VGS=4.5V) *RDS(ON)90m(VGS=2.5V) P-Ch: *VDS(V)=-30V *ID=-2.3A(VGS=-10V) *RDS(ON)115m(VGS=-10V) *RDS(ON)150m(VGS=-4.5V) *RDS(ON)200m(VGS=-2.5V)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

DFLS160Q-7

Marking:F17;Package:PowerDI123;1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER PowerDI123

Features GuardRingDieConstructionforTransientProtection LowPowerLoss,HighEfficiency PatentedInterlockingClipDesignforHighSurgeCurrent Capacity Lead-FreeFinish;RoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101Standardsf

DIODES

Diodes Incorporated

DFLS260Q-7

Marking:F17A;Package:PowerDI123;2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWERDI123

Features •GuardRingDieConstructionforTransientProtection •LowPowerLoss,HighEfficiency •PatentedInterlockingClipDesignforHighSurgeCurrentCapacity •Lead-FreeFinish;RoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101

DIODES

Diodes Incorporated

DTB113E

Marking:F11;DIGITAL TRANSISTOR

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigne

ROHMRohm

罗姆罗姆半导体集团

DTB114E

Marking:F14;DIGITAL TRANSISTOR

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigne

ROHMRohm

罗姆罗姆半导体集团

晶体管资料

  • 型号:

    F1612BH

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    50HZ-Thy

  • 性质:

  • 封装形式:

    直插封装

  • 极限工作电压:

    200V

  • 最大电流允许值:

    10A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    BSTD10...M,CS15-...,T9,5N...,

  • 最大耗散功率:

  • 放大倍数:

  • 图片代号:

    B-10

  • vtest:

    200

  • htest:

    999900

  • atest:

    10

  • wtest:

    0

详细参数

  • 型号:

    F1

  • 制造商:

    Hirose

  • 功能描述:

    Unspecified Tools & Accessories REPLACEMENT SPRING FOR DF3-TA2428HC

供应商型号品牌批号封装库存备注价格
群鑫
22+
R-1
30788
原装正品 一级代理
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BORN(伯恩半导体)
24+
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50000
品牌代理,价格优势,技术支持!!
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NXP/恩智浦
23+
SOD882
15000
全新原装现货,价格优势
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DreamLNK(骏晔科技)
2447
-
315000
100个/袋一级代理专营品牌!原装正品,优势现货,长期
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DreamLNK(骏晔科技)
2021+
-
567
询价
骏晔科技
21+
98
全新原装鄙视假货
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JXND
24+
NA/
10000
优势代理渠道,原装正品,可全系列订货开增值税票
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24+
N/A
53000
一级代理-主营优势-实惠价格-不悔选择
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迪一
22+
N/A
2500
进口原装,优势现货
询价
迪一
500
询价
更多F1供应商 更新时间2025-5-24 9:31:00