丝印：F112；Package：SOIC；DUAL NEGATIVE-EDGE-TRIGGERED J-K FLIP-FLOP WITH CLEAR AND PRESET

Package Options Include Plastic Small-Outline Packages and Standard Plastic 300-mil DIPs description The SN74F112 contains two independent J-K negative-edge-triggered flip-flops. A low level at the preset (PRE) or clear (CLR) inputs sets or resets the outputs regardless of the levels of t

文件：566.64 Kbytes 页数：16 Pages

TI

德州仪器

丝印：F112；Package：SOIC；DUAL NEGATIVE-EDGE-TRIGGERED J-K FLIP-FLOP WITH CLEAR AND PRESET

Package Options Include Plastic Small-Outline Packages and Standard Plastic 300-mil DIPs description The SN74F112 contains two independent J-K negative-edge-triggered flip-flops. A low level at the preset (PRE) or clear (CLR) inputs sets or resets the outputs regardless of the levels of t

文件：566.64 Kbytes 页数：16 Pages

TI

德州仪器

丝印：F112；Package：SOIC；DUAL NEGATIVE-EDGE-TRIGGERED J-K FLIP-FLOP WITH CLEAR AND PRESET

Package Options Include Plastic Small-Outline Packages and Standard Plastic 300-mil DIPs description The SN74F112 contains two independent J-K negative-edge-triggered flip-flops. A low level at the preset (PRE) or clear (CLR) inputs sets or resets the outputs regardless of the levels of t

文件：566.64 Kbytes 页数：16 Pages

TI

德州仪器

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

文件：44.67 Kbytes 页数：2 Pages

POLYFET

50Ω SE-In – 100Ω DIFF-Out Amplifier 3.0GHz to 4.2GHz

Features RF range: 3.0GHz to 4.2GHz Gain = 19dB at 3.55GHz Noise figure = 1.8dB at 3.55GHz OIP3 = +32dBm at 3.55GHz Output P1dB = +18dBm at 3.55GHz Gain variation over temperature = ±0.15dB typical 50Ω single-ended input impedances 100Ω differential output impedances 3.3V or 5V p

文件：2.084909 Mbytes 页数：22 Pages

RENESAS

瑞萨

50Ω SE-In – 100Ω DIFF-Out Amplifier 3.0GHz to 4.2GHz

Features RF range: 3.0GHz to 4.2GHz Gain = 19dB at 3.55GHz Noise figure = 1.8dB at 3.55GHz OIP3 = +32dBm at 3.55GHz Output P1dB = +18dBm at 3.55GHz Gain variation over temperature = ±0.15dB typical 50Ω single-ended input impedances 100Ω differential output impedances 3.3V or 5V p

文件：2.084909 Mbytes 页数：22 Pages

RENESAS

瑞萨

50Ω SE-In – 100Ω DIFF-Out Amplifier 3.0GHz to 4.2GHz

Features RF range: 3.0GHz to 4.2GHz Gain = 19dB at 3.55GHz Noise figure = 1.8dB at 3.55GHz OIP3 = +32dBm at 3.55GHz Output P1dB = +18dBm at 3.55GHz Gain variation over temperature = ±0.15dB typical 50Ω single-ended input impedances 100Ω differential output impedances 3.3V or 5V p

文件：2.084909 Mbytes 页数：22 Pages

RENESAS

瑞萨

50Ω SE-In – 100Ω DIFF-Out Amplifier 3.0GHz to 4.2GHz

Features RF range: 3.0GHz to 4.2GHz Gain = 19dB at 3.55GHz Noise figure = 1.8dB at 3.55GHz OIP3 = +32dBm at 3.55GHz Output P1dB = +18dBm at 3.55GHz Gain variation over temperature = ±0.15dB typical 50Ω single-ended input impedances 100Ω differential output impedances 3.3V or 5V p

文件：2.084909 Mbytes 页数：22 Pages

RENESAS

瑞萨

50Ω SE-In – 100Ω DIFF-Out Amplifier 3.0GHz to 4.2GHz

Features RF range: 3.0GHz to 4.2GHz Gain = 19dB at 3.55GHz Noise figure = 1.8dB at 3.55GHz OIP3 = +32dBm at 3.55GHz Output P1dB = +18dBm at 3.55GHz Gain variation over temperature = ±0.15dB typical 50Ω single-ended input impedances 100Ω differential output impedances 3.3V or 5V p

文件：2.084909 Mbytes 页数：22 Pages

RENESAS

瑞萨

50Ω SE-In – 100Ω DIFF-Out Amplifier 3.0GHz to 4.2GHz

Features RF range: 3.0GHz to 4.2GHz Gain = 19dB at 3.55GHz Noise figure = 1.8dB at 3.55GHz OIP3 = +32dBm at 3.55GHz Output P1dB = +18dBm at 3.55GHz Gain variation over temperature = ±0.15dB typical 50Ω single-ended input impedances 100Ω differential output impedances 3.3V or 5V p

文件：2.084909 Mbytes 页数：22 Pages

RENESAS

瑞萨