50Ω SE-In – 100Ω DIFF-Out Amplifier 3.0GHz to 4.2GHz

Features RF range: 3.0GHz to 4.2GHz Gain = 19dB at 3.55GHz Noise figure = 1.8dB at 3.55GHz OIP3 = +32dBm at 3.55GHz Output P1dB = +18dBm at 3.55GHz Gain variation over temperature = ±0.15dB typical 50Ω single-ended input impedances 100Ω differential output impedances 3.3V or 5V p

文件：2.084909 Mbytes 页数：22 Pages

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包装：盒 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：BOARD

Renesas Electronics America Inc

50Ω SE-In – 100Ω DIFF-Out Amplifier 3.0GHz to 4.2GHz

Features RF range: 3.0GHz to 4.2GHz Gain = 19dB at 3.55GHz Noise figure = 1.8dB at 3.55GHz OIP3 = +32dBm at 3.55GHz Output P1dB = +18dBm at 3.55GHz Gain variation over temperature = ±0.15dB typical 50Ω single-ended input impedances 100Ω differential output impedances 3.3V or 5V p

文件：2.084909 Mbytes 页数：22 Pages

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U.S. ELECTRICAL DIVISION MANCHESTER, NH 03108

文件：83.19 Kbytes 页数：1 Pages

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P-Channel MOSFET uses advanced trench technology

文件：2.12619 Mbytes 页数：7 Pages

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杜因特