P-Channel MOSFET uses advanced trench technology

文件：2.12619 Mbytes 页数：7 Pages

DOINGTER

杜因特

Power MOSFETs

Renesas

瑞萨

Silicon NPN Epitaxial Twin Transistor

Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm)

文件：280.41 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial Twin Transistor

Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm)

文件：280.41 Kbytes 页数：9 Pages

RENESAS

瑞萨

N-Channel Power MOSFET

DESCRIPTION ·Avalanche Rated ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 230mΩ(Max)@VGS= 10V ·100% avalanche tested APPLICATIONS ·High Power Density ·Easy to Mount ·Space Savings

文件：349.89 Kbytes 页数：2 Pages

ISC

无锡固电