丝印：F126；Package：SOIC；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

4.5-V to 5.5-V VCC Operation Max tpd of 6.5 ns at 5 V 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers description/ordering information The SN74F126 bus buffer features independent line drivers with 3-state outputs. Each output is disabled when the associated output-enab

文件：459.76 Kbytes 页数：13 Pages

TI

德州仪器

丝印：F126；Package：SOIC；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

4.5-V to 5.5-V VCC Operation Max tpd of 6.5 ns at 5 V 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers description/ordering information The SN74F126 bus buffer features independent line drivers with 3-state outputs. Each output is disabled when the associated output-enab

文件：459.76 Kbytes 页数：13 Pages

TI

德州仪器

丝印：F126；Package：SOIC；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

4.5-V to 5.5-V VCC Operation Max tpd of 6.5 ns at 5 V 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers description/ordering information The SN74F126 bus buffer features independent line drivers with 3-state outputs. Each output is disabled when the associated output-enab

文件：459.76 Kbytes 页数：13 Pages

TI

德州仪器

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetim

文件：38.93 Kbytes 页数：2 Pages

Polyfet

8-bit Microcontrollers

文件：1.55241 Mbytes 页数：80 Pages

Fujitsu

富士通

8-bit Microcontrollers

文件：1.55241 Mbytes 页数：80 Pages

Fujitsu

富士通