2SC2223

Marking：F12；Package：SOT-23；NPN-General use transistor

NPN-Generalusetransistor225mW50m20V Qualitylevelandexecutivestandard ◆“G”level QZJ840611Q/FRQZJ123-2007 ◆theⅡlevelofnationalstandard GB4589.1-89GB/T12560-1999Q/FR124-2007 Applications：Canbeusedforswitchingandamplifyingin variousele

DTB123E

Marking：F12；DIGITAL TRANSISTOR

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigne

DTB123ECHZG

Marking：F12；Package：SOT-23；500mA/-50V Digital transistor (with built-in resistor)

DTB123EKFRA

Marking：F12；Package：SOT-346；-500mA/-50V Digital transistor (with built-in resistors)

MBRXF120

Marking：F12；Package：SOD-123F；Schottky Barrier Rectifiers

MIC2005-1.2YML-TR

Marking：F12；Package：DFN；Fixed and Adjustable Current Limiting Power Distribution Switches

FSA1208BQX

Marking：F1208；Package：MLP；Low-Power, Eight-Port, High-Speed Isolation Switch

Description TheFSA1208isalow-power,eight-port,high-speedswitch.Thispartisconfiguredasasingle-pole,singlethrowswitchandisoptimizedforisolatingahighspeedsource,suchasaDDRmemorybus.TheFSA1208featuresanextremelylowoncapacitance(CON)of6pFSuperiorchanne

RFP12N10L

Marking：F12N10L；Package：TO-220AB；12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5V)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitchingandsolenoiddrivers.Thisperformanceisaccomplishedthroughaspecialgate

F12N60

Marking：F12N60；Package：TO-220F；12A 600V N-channel Enhancement Mode Power MOSFET

F12N60

Marking：F12N60；Package：TO-220F；12A 600V N-channel Enhancement Mode Power MOSFET