MIC2514BM5

Marking：F10；Package：SOT-25；IttyBitty??Integrated High-Side Switch Preliminary Information

GeneralDescription TheMIC2514isanintegratedhigh-sidepowerswitchthatconsistsofaTTLcompatibleinputandprotectedPchannelMOSFET.TheMIC2514canbeusedinsteadofaseparatehigh-sidedriverandMOSFETinmanylowvoltageapplications. Features •MOSFETon-resistance –

MIC2514BM5

Marking：F10；Package：SOT-25；IttyBitty Integrated High-Side Switch

MIC2514YM5

Marking：F10；Package：SOT-25；IttyBitty Integrated High-Side Switch

SBR8L100HT

Marking：F10；Package：TO277B；Super Barrier Rectifier Schottky Diode

FFPF10F150STU

Marking：F10F150S；Package：TO-220F-2L；10 A, 1500 V, Damper Diode

Features •HighSpeedRecoverytRR=170ns(@IF=1A) •MaxForwardVoltage,VF=1.6V(@TC=25°C) •1500VReverseVoltageandHighReliability •LowForwardVoltage •ThisDeviceisPb−FreeandisRoHSCompliant Applications •SuitableforDamperDiodeinHorizontalDeflectionCircu

SN74F1056D

Marking：F1056；Package：SOIC；8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY

DesignedtoReduceReflectionNoise RepetitivePeakForwardCurrent300mA 8-BitArrayStructureSuitedfor Bus-OrientedSystems description ThisSchottkybarrierdiodebus-terminationarray isdesignedtoreducereflectionnoiseonmemory buslines.Thisdeviceconsistsofan8-bit high

SN74F1056DR

Marking：F1056；Package：SOIC；8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY

DesignedtoReduceReflectionNoise RepetitivePeakForwardCurrent300mA 8-BitArrayStructureSuitedfor Bus-OrientedSystems description ThisSchottkybarrierdiodebus-terminationarray isdesignedtoreducereflectionnoiseonmemory buslines.Thisdeviceconsistsofan8-bit high

SN74F1056DR.A

Marking：F1056；Package：SOIC；8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY

DesignedtoReduceReflectionNoise RepetitivePeakForwardCurrent300mA 8-BitArrayStructureSuitedfor Bus-OrientedSystems description ThisSchottkybarrierdiodebus-terminationarray isdesignedtoreducereflectionnoiseonmemory buslines.Thisdeviceconsistsofan8-bit high

STF10NK50Z

Marking：F10NK50Z；Package：TO-220FP；N-channel 500 V, 0.55 Ω, 9 A Zener-protected SuperMESH™ Power MOSFET in TO-220FP package

Description ThisdeviceisanN-channelZener-protected PowerMOSFETdevelopedusing STMicroelectronics’SuperMESH™technology, achievedthroughoptimizationofST’swell establishedstrip-basedPowerMESH™layout.In additiontoasignificantreductioninonresistance,thisdeviceisdesigne

F10N60

Marking：F10N60；Package：TO-220F；10A 600V N-channel Enhancement Mode Power MOSFET