PJF18N20_T0_00001

Marking：F18N20；Package：ITO-220AB-F；200V N-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@10V,ID@9A

RFP12N10L

Marking：F12N10L；Package：TO-220AB；12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5V)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitchingandsolenoiddrivers.Thisperformanceisaccomplishedthroughaspecialgate

RT9018A-15GQW

Marking：F1=**；Package：WDFN-103x3；Maximum 3A, Ultra Low Dropout Regulator

GeneralDescription TheRT9018A/BisahighperformancepositivevoltageregulatordesignedforuseinapplicationsrequiringverylowInputvoltageandverylowdropoutvoltageatupto3A(Peak).ItoperateswithaVINaslowas1.0VandVDDvoltage3Vwithoutputvoltageprogrammableaslowas

SP6201EM5-1-5

Marking：F15；Package：SOT-25；Micropower, 100mA and 200mA CMOS LDO Regulators

DESCRIPTION TheSP6200andSP6201areCMOSLDOsdesignedtomeetabroadrangeofapplicationsthatrequireaccuracy,speedandeaseofuse.TheseLDOsofferextremelylowquiescentcurrentwhichonlyincreasesslightlyunderload,thusprovidingadvantagesingroundcurrentperformanceoverbipo

SP6201EM5-1-8

Marking：F18；Package：SOT-25；Micropower, 100mA and 200mA CMOS LDO Regulators

DESCRIPTION TheSP6200andSP6201areCMOSLDOsdesignedtomeetabroadrangeofapplicationsthatrequireaccuracy,speedandeaseofuse.TheseLDOsofferextremelylowquiescentcurrentwhichonlyincreasesslightlyunderload,thusprovidingadvantagesingroundcurrentperformanceoverbipo

STF10NK50Z

Marking：F10NK50Z；Package：TO-220FP；N-channel 500 V, 0.55 Ω, 9 A Zener-protected SuperMESH™ Power MOSFET in TO-220FP package

Description ThisdeviceisanN-channelZener-protected PowerMOSFETdevelopedusing STMicroelectronics’SuperMESH™technology, achievedthroughoptimizationofST’swell establishedstrip-basedPowerMESH™layout.In additiontoasignificantreductioninonresistance,thisdeviceisdesigne

STF11NM80

Marking：F11NM80；Package：TO-220FP；N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247

Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh™technology,which associatesth

XC7SH14GV

Marking：f14；Package：SOT753；Inverting Schmitt trigger

1.Generaldescription XC7SH14isahigh-speedSi-gateCMOSdevice.Itprovidesaninvertingbufferfunctionwith Schmitttriggeraction.Thisdeviceiscapableoftransformingslowlychanginginputsignalsinto sharplydefined,jitter-freeoutputsignals. 2.Featuresandbenefits •Symmetric

XC7WH14DC

Marking：f14；Package：SOT765-1；Triple inverting Schmitt trigger

1.Generaldescription TheXC7WH14isahigh-speedSi-gateCMOSdevice.Thisdeviceprovidesthreeinvertingbuffers withSchmitttriggeraction.Thisdeviceiscapableoftransformingslowlychanginginputsignalsinto sharplydefined,jitter-freeoutputsignals. 2.Featuresandbenefits •S

XC7WH14DP

Marking：f14；Package：SOT505-2；Triple inverting Schmitt trigger

1.Generaldescription TheXC7WH14isahigh-speedSi-gateCMOSdevice.Thisdeviceprovidesthreeinvertingbuffers withSchmitttriggeraction.Thisdeviceiscapableoftransformingslowlychanginginputsignalsinto sharplydefined,jitter-freeoutputsignals. 2.Featuresandbenefits •S