FDB302

3AMPFASTRECOVERYBRIDGERECTIFIERS

FDN302

P-Channel2.5VSpecifiedPowerTrenchMOSFET

GeneralDescription ThisP-Channel2.5VspecifiedMOSFETusesaruggedgateversionofFairchild’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagement applicationswithawiderangeofgatedrivevoltage(2.5V–12V). Features •–20V,–2.4A.Rds(on)=0.055Ω@

FDN302P

P-Channel2.5VSpecifiedPowerTrenchMOSFET

GeneralDescription ThisP-Channel2.5VspecifiedMOSFETusesaruggedgateversionofFairchild’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagement applicationswithawiderangeofgatedrivevoltage(2.5V–12V). Features •–20V,–2.4A.Rds(on)=0.055Ω@

FDN302P

ContainsallsupportcircuitryneededfortheADS1148/ADS1248

FDN302P

ContainsallsupportcircuitryneededfortheADS1146/ADS1246

FDN302P

P-ChannelEnhancement-ModeMOSFETs

ProductSummary Vps=-20V,Ip=-3A Rosion)

FDN302P

P-Channel2.5V(D-S)MOSFET

Features •–20V,–2.4A.RDS(ON)=55mΩ@VGS=–4.5V RDS(ON)=80mΩ@VGS=–2.5V •Fastswitchingspeed •Highperformancetrenchtechnologyforextremely lowRDS(ON) •SuperSOTTM-3provideslowRDS(ON)and30higher powerhandlingcapabilitythanSOT23inthesame footprint

FDN302P

P-Channel2.5V(D-S)MOSFET

GeneralDescription ThisP-Channel2.5Vhasbeenoptimizedforpower managementapplicationswithawiderangeofgate drivevoltage(2.5V–12V). Applications •Powermanagement •Loadswitch •Batteryprotection Features •–20V,–2.4A.RDS(ON)=55mΩ@VGS=–4.5V RDS(ON)=

FDN302P-NL

P-Channel20-V(D-S)MOSFET

FDV302

DigitalFET,P-Channel

GeneralDescription ThisP-ChannellogiclevelenhancementmodefieldeffecttransistorisproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeciallyfor