OVP

ET9540 can disconnect the systems from its output pin (OUT) in case wrong input operating conditions are detected. The system is positive overvoltage protected up to 28V.\n  ET9540 has internal Thermal-Shutdown Protection and Input Voltage detection.\n  \n Features ● 4.8A Continuous Current Capability\r\n\r\n● Typical RON: 35mΩ N-Channel MOSFET\r\n\r\n● VIN Operating Range: 2.5V to 28V\r\n\r\n● Internal Overvoltage Lockout :\r\n\r\n14.0V(ET9540)\r\n\r\n10.8V(ET9540M1)\r\n\r\n10V(ET9540M)\r\n\r\n6.8V(ET9540L)\r\n\r\n● Overvoltage-Protection Response Time：100ns(;

ETEK

力芯微

6.8V OVP with FLAG and Adj OVP

ET9540CL can disconnect the systems from its output pin(OUT) in case wrong input operating conditions are detected. The system is positive over-voltage protected up to 28V. The internal over-voltage threshold(OVLO) is 6.8V.ET9540CL has internal Thermal-Shutdown Protection and Input Voltage detection • 4.5A Continuous Current Capability\n\n• Typical RON: 30mΩ N-Channel MOSFET\n\n• VIN Operating Range: 2.5V to 28V\n\n• Internal Over-voltage Lockout: 6.8V\n\n• Over-voltage-Protection Response Time：50ns(TYP)\n\n• Startup Debounce Time:15ms(TYP)\n\n• Internal Thermal-Shutdown Protection\n\n• Surge I;

ETEK

力芯微

Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：125.1 Kbytes 页数：8 Pages

IRF

P-Channel MOSFET Transistor

文件：334.83 Kbytes 页数：2 Pages

ISC

无锡固电

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

文件：508.31 Kbytes 页数：12 Pages

SAMSUNG

三星