Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：125.1 Kbytes 页数：8 Pages

IRF

丝印：F9540NS；Package：TO-263；P-Channel Power MOSFET

Application + DC/DC Converter « Portable equipment and batt « Power Switch

文件：3.53757 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

P-Channel MOSFET Transistor

文件：334.83 Kbytes 页数：2 Pages

ISC

无锡固电

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

文件：508.31 Kbytes 页数：12 Pages

Samsung

三星

Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：125.1 Kbytes 页数：8 Pages

IRF