PNP, 200V, 2A, PowerDI5

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. •BVCEO = -200V\n•IC = -2A High Continuous Collector Current\n•ICM = -5A Peak Collector Current\n•PD up to 3.2W\n•43% smaller than SOT223; 60% smaller than TO252 (DPAK)\n•Maximum height just 1.1mm\n•Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)\n•Halogen and Antimony Free. “Green” De;

Diodes

美台半导体

Package：PowerDI™ 5；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：PWR HI VOLTAGE TRANSISTOR PDI5 T

PAM

龙鼎微

200V PNP HIGH VOLTAGE TRANSISTOR PowerDI짰5

Features • BVCEO = -200V • IC = -2A High Continuous Collector Current • ICM = -5A Peak Collector Current • PD up to 3.2W • 43 smaller than SOT223; 60 smaller than TO252 (DPAK) • Maximum height just 1.1mm • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimon

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DIODES

美台半导体

MURATA
SMD

MuRata

村田

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