40V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR

Features • BVCEO > -40V • IC = -500mA High Collector Current • ICM = -1A Peak Pulse Current • PD = 1000mW Power Dissipation • Low Collector-Emitter Saturation Voltage, VCE(sat) • 0.60mm2 Package Footprint, 13 times Smaller than SOT23 • 0.5mm Height Package Minimizing Off-Board Profile • Co

文件：132.54 Kbytes 页数：5 Pages

DIODES

美台半导体

40V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR

Features • BVCEO > -40V • IC = -500mA High Collector Current • ICM = -1A Peak Pulse Current • PD = 1000mW Power Dissipation • Low Collector-Emitter Saturation Voltage, VCE(sat) • 0.60mm2 Package Footprint, 13 times Smaller than SOT23 • 0.5mm Height Package Minimizing Off-Board Profile • Co

文件：132.54 Kbytes 页数：5 Pages

DIODES

美台半导体

40V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR

Features • BVCEO > -40V • IC = -500mA High Collector Current • ICM = -1A Peak Pulse Current • PD = 1000mW Power Dissipation • Low Collector-Emitter Saturation Voltage, VCE(sat) • 0.60mm2 Package Footprint, 13 times Smaller than SOT23 • 0.5mm Height Package Minimizing Off-Board Profile • Co

文件：132.54 Kbytes 页数：5 Pages

DIODES

美台半导体

40V PNP LOW VCE(sat) TRANSISTOR

文件：414.47 Kbytes 页数：7 Pages

DIODES

美台半导体

PNP, 40V, 0.5A, DFN1006-3

Diodes

美台半导体

Package：3-UFDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 40V 0.5A 3DFN

DIODES

美台半导体