2.0A 50V Schottky diode

文件：330.321 Kbytes 页数：2 Pages

SUNMATE

森美特

PDF上传者：深圳冠荣电子有限公司

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

文件：565.55 Kbytes 页数：2 Pages

CHENDA

辰达半导体

SINGLE PHASE 2.0A MP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

文件：2.34363 Mbytes 页数：2 Pages

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

Power Schottky Rectifier

Features • International standard package • Very low VF • Extremely low switching losses • Low IRM-values • Epoxy meets UL 94V-0 Applications • Rectifiers in switch mode power supplies (SMPS) • Free wheeling diode in low voltage converters Advantages • High reliability circuit operation

文件：152.81 Kbytes 页数：2 Pages

IXYS

艾赛斯

Power Schottky Rectifier

Features • International standard package • Very low VF • Extremely low switching losses • Low IRM-values • Epoxy meets UL 94V-0 Applications • Rectifiers in switch mode power supplies (SMPS) • Free wheeling diode in low voltage converters Advantages • High reliability circuit operation

文件：152.81 Kbytes 页数：2 Pages

IXYS

艾赛斯

Power Schottky Rectifier

Features • International standard package • Very low VF • Extremely low switching losses • Low IRM-values • Epoxy meets UL 94V-0 Applications • Rectifiers in switch mode power supplies (SMPS) • Free wheeling diode in low voltage converters

文件：149.62 Kbytes 页数：2 Pages

IXYS

艾赛斯

15V LOW VCE(sat) NPN SURFACE MOUNT TRANSISTOR

Features • BVCEO > 15V • IC = 500mA High Collector Current • ICM = 1A Peak Pulse Current • PD = 1000mW Power Dissipation • Low Collector-Emitter Saturation Voltage, VCE(sat) • 0.60mm2 Package Footprint, 13 times Smaller than SOT23 • 0.5mm Height Package Minimizing Off-Board Profile • Compl

文件：135.47 Kbytes 页数：5 Pages

DIODES

美台半导体

15V LOW VCE(sat) NPN SURFACE MOUNT TRANSISTOR

Features • BVCEO > 15V • IC = 500mA High Collector Current • ICM = 1A Peak Pulse Current • PD = 1000mW Power Dissipation • Low Collector-Emitter Saturation Voltage, VCE(sat) • 0.60mm2 Package Footprint, 13 times Smaller than SOT23 • 0.5mm Height Package Minimizing Off-Board Profile • Compl

文件：135.47 Kbytes 页数：5 Pages

DIODES

美台半导体

15V LOW VCE(sat) NPN SURFACE MOUNT TRANSISTOR

Features • BVCEO > 15V • IC = 500mA High Collector Current • ICM = 1A Peak Pulse Current • PD = 1000mW Power Dissipation • Low Collector-Emitter Saturation Voltage, VCE(sat) • 0.60mm2 Package Footprint, 13 times Smaller than SOT23 • 0.5mm Height Package Minimizing Off-Board Profile • Compl

文件：135.47 Kbytes 页数：5 Pages

DIODES

美台半导体

40V LOW VCE(sat) NPN SURFACE MOUNT TRANSISTOR

Features • BVCEO > 40V • IC = 500mA High Collector Current • ICM = 1A Peak Pulse Current • PD = 1000mW Power Dissipation • Low Collector-Emitter Saturation Voltage, VCE(sat) • 0.60mm2 Package Footprint, 13 times Smaller than SOT23 • 0.5mm Height Package Minimizing Off-Board Profile • Compl

文件：132.93 Kbytes 页数：5 Pages

DIODES

美台半导体