DS125资料datasheet下载库存现货第7页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
DS1250Y	文件：217.62 Kbytes Page：11 Pages	4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such 文件：217.62 Kbytes 页数：11 Pages	Dallas	Dallas
DS1250Y-100	文件：217.62 Kbytes Page：11 Pages	4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such 文件：217.62 Kbytes 页数：11 Pages	Dallas	Dallas
DS1250Y-70	文件：217.62 Kbytes Page：11 Pages	4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such 文件：217.62 Kbytes 页数：11 Pages	Dallas	Dallas
DS1250YL-100	文件：181.99 Kbytes Page：9 Pages	4096K Nonvolatile SRAM DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit 文件：181.99 Kbytes 页数：9 Pages	Dallas	Dallas
DS1250YL-100-IND	文件：181.99 Kbytes Page：9 Pages	4096K Nonvolatile SRAM DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit 文件：181.99 Kbytes 页数：9 Pages	Dallas	Dallas
DS1250YL-70	文件：181.99 Kbytes Page：9 Pages	4096K Nonvolatile SRAM DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit 文件：181.99 Kbytes 页数：9 Pages	Dallas	Dallas
DS1250YL-70-IND	文件：181.99 Kbytes Page：9 Pages	4096K Nonvolatile SRAM DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit 文件：181.99 Kbytes 页数：9 Pages	Dallas	Dallas
DS1250YP-100-IND	文件：217.62 Kbytes Page：11 Pages	4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such 文件：217.62 Kbytes 页数：11 Pages	Dallas	Dallas
DS1250YP-70-IND	文件：217.62 Kbytes Page：11 Pages	4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such 文件：217.62 Kbytes 页数：11 Pages	Dallas	Dallas
DS1251	文件：291.94 Kbytes Page：22 Pages	4096k NV SRAM with Phantom Clock DESCRIPTION The DS1251 4096K NV SRAM with Phantom Clock is a fully static nonvolatile RAM (organized as 512K words by 8 bits) with a built–in real time clock. The DS1251Y has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance conditi 文件：291.94 Kbytes 页数：22 Pages	Dallas	Dallas

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技术参数

Memory Type：
NV SRAM
Memory Size：
512K x 8
Bus Type：
Parallel
Features：
DIP with Internal Battery
VSUPPLY (min)(V)：
4.75
VSUPPLY (max)(V)：
5.25
RoHS Available：
See Data Sheet
Oper. Temp.(°C)：
-40 to +85
Package/ Pins：
MOD/32
Smallest Available Pckg. (max w/pins)(mm2)：
596.9
Budgetary Price (See Notes)：
$59.92 @1k

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市福田区绿盛电子商行	DS1251W-100/120	DAL	2015+	SOP/DIP	19889	一级代理原装现货,特价热卖!	询价
深圳市毅创腾电子科技有限公司	DS1259S	DALLAS	23+	SOP-16	2800	绝对全新原装!现货!特价!请放心订购!	询价
深圳市恒创达实业有限公司	DS125BR401ANJYR	TI/NS	17+	QFN54	6200	100%原装正品现货	询价
深圳市卓越微芯电子有限公司	DS125BR800ANJYR	TI/NS	25+	QFN54	14	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市星佑电子有限公司	DS1259S	DALLAS	05+	SOP/16	5	全新原装绝对有货	询价
深圳市勤思达科技有限公司	DS1259	DALLAS	15+	DIP16	11560	全新原装,现货库存,长期供应	询价
深圳市一线半导体有限公司	DS1259S	DALLAS	24+	SMD	193	现货	询价
深圳市豪迈兴电子有限公司	DS1259S	DALLAS	24+	SOP-16	5645	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市弘为电子有限公司	DS1250AB-70	MAX/DALL	24+	原厂封装	4612	原装现货假一罚十	询价
深圳市福安瓯科技有限公司	DS1251Y-120	DALLAS	25+	N/A	2500	强调现货,随时查询!	询价

更多DS125供应商更新时间2025-10-10 9:01:00

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