128k x 16 Nonvolatile SRAM

DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condi

文件：174.34 Kbytes 页数：8 Pages

Dallas

128k x 16 Nonvolatile SRAM

DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condi

文件：174.34 Kbytes 页数：8 Pages

Dallas

128k x 16 Nonvolatile SRAM

DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condi

文件：174.34 Kbytes 页数：8 Pages

Dallas

128k x 16 Nonvolatile SRAM

DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condi

文件：174.34 Kbytes 页数：8 Pages

Dallas

Battery Manager Chip

DESCRIPTION The DS1259 Battery Manager Chip is a low-cost battery management system for portable and nonvolatile electronic equipment. A battery connected to the battery input pin supplies power to CMOS electronic circuits when primary power is lost through an efficient switch via the VCCO pins.

文件：73.25 Kbytes 页数：5 Pages

Dallas

DS125BR111 Low Power 12.5 Gbps 1-Lane Linear Repeater with Equalization

1 Features 1• Low 65 mW/Channel (typ) Power Consumption • Supports Link Training • Supports Out-of-Band (OOB) Signaling • Advanced Signal Conditioning I/O – Receive CTLE up to 10 dB at 6 GHz – Linear Output Driver – Output Voltage Range over 1200 mV • Programmable via Pin Selection, EEPROM

文件：825.01 Kbytes 页数：45 Pages

TI

德州仪器

丝印：2B111A0；Package：WQFN；DS125BR111 Low Power 12.5 Gbps 1-Lane Linear Repeater with Equalization

1 Features 1• Low 65 mW/Channel (typ) Power Consumption • Supports Link Training • Supports Out-of-Band (OOB) Signaling • Advanced Signal Conditioning I/O – Receive CTLE up to 10 dB at 6 GHz – Linear Output Driver – Output Voltage Range over 1200 mV • Programmable via Pin Selection, EEPROM

文件：825.01 Kbytes 页数：45 Pages

TI

德州仪器

丝印：2B111A0；Package：WQFN；DS125BR111 Low Power 12.5 Gbps 1-Lane Linear Repeater with Equalization

1 Features 1• Low 65 mW/Channel (typ) Power Consumption • Supports Link Training • Supports Out-of-Band (OOB) Signaling • Advanced Signal Conditioning I/O – Receive CTLE up to 10 dB at 6 GHz – Linear Output Driver – Output Voltage Range over 1200 mV • Programmable via Pin Selection, EEPROM

文件：825.01 Kbytes 页数：45 Pages

TI

德州仪器

丝印：2B111A0；Package：WQFN；DS125BR111 Low Power 12.5 Gbps 1-Lane Linear Repeater with Equalization

1 Features 1• Low 65 mW/Channel (typ) Power Consumption • Supports Link Training • Supports Out-of-Band (OOB) Signaling • Advanced Signal Conditioning I/O – Receive CTLE up to 10 dB at 6 GHz – Linear Output Driver – Output Voltage Range over 1200 mV • Programmable via Pin Selection, EEPROM

文件：825.01 Kbytes 页数：45 Pages

TI

德州仪器

丝印：2B111A0；Package：WQFN；DS125BR111 Low Power 12.5 Gbps 1-Lane Linear Repeater with Equalization

1 Features 1• Low 65 mW/Channel (typ) Power Consumption • Supports Link Training • Supports Out-of-Band (OOB) Signaling • Advanced Signal Conditioning I/O – Receive CTLE up to 10 dB at 6 GHz – Linear Output Driver – Output Voltage Range over 1200 mV • Programmable via Pin Selection, EEPROM

文件：825.01 Kbytes 页数：45 Pages

TI

德州仪器