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DS1258Y-100-IND中文资料Dallas数据手册PDF规格书

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厂商型号

DS1258Y-100-IND

功能描述

128k x 16 Nonvolatile SRAM

文件大小

174.34 Kbytes

页面数量

8

生产厂商

Dallas

中文名称

达拉斯半导体公司

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-12-13 16:10:00

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DS1258Y-100-IND规格书详情

DESCRIPTION

The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption.

FEATURES

10-Year Minimum Data Retention in the Absence of External Power

Data is Automatically Protected During a Power Loss

Separate Upper Byte and Lower Byte Chip Select Inputs

Unlimited Write Cycles

Low-Power CMOS

Read and Write Access Times as Fast as 70ns

Lithium Energy Source is Electrically Disconnected to Retain Freshness Until Power is Applied for the First Time

Full 10 Operating Range (DS1258Y)

Optional 5 Operating Range (DS1258AB)

Optional Industrial Temperature Range of -40C to +85C, Designated IND

产品属性

  • 型号:

    DS1258Y-100-IND

  • 制造商:

    DALLAS

  • 制造商全称:

    Dallas Semiconductor

  • 功能描述:

    128k x 16 Nonvolatile SRAM

供应商 型号 品牌 批号 封装 库存 备注 价格
NS
22+
DIP
920
全新原装现货!自家库存!
询价
DALLAS
25+
DIP
58788
百分百原装现货 实单必成 欢迎询价
询价
Maxim
22+
40EDIP
9000
原厂渠道,现货配单
询价
DALLAS
25+23+
NA
16498
绝对原装正品全新进口深圳现货
询价
原厂正品
23+
DIP-8
5000
原装正品,假一罚十
询价
DALLAS
23+
MOD
65480
询价
DALLAS
17+
DIP40
60000
保证进口原装可开17%增值税发票
询价
MAXIM
22+
DIP-16
8000
原装正品支持实单
询价
MaximIntegrated
24+
16-PDIP
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!
询价
DALLAS
24+
DIP
428
询价