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DS125

Homogeneity and reliability

LUMILEDSLumileds Lighting Company

飞光半导体

DS1250AB

4096k Nonvolatile SRAM

DESCRIPTION TheDS12504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuch

DallasDallas Semiconductor

亚德诺亚德诺半导体

DS1250AB-100

4096k Nonvolatile SRAM

DESCRIPTION TheDS12504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuch

DallasDallas Semiconductor

亚德诺亚德诺半导体

DS1250AB-70

4096k Nonvolatile SRAM

DESCRIPTION TheDS12504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuch

DallasDallas Semiconductor

亚德诺亚德诺半导体

DS1250ABP-100-IND

4096k Nonvolatile SRAM

DESCRIPTION TheDS12504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuch

DallasDallas Semiconductor

亚德诺亚德诺半导体

DS1250ABP-70-IND

4096k Nonvolatile SRAM

DESCRIPTION TheDS12504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuch

DallasDallas Semiconductor

亚德诺亚德诺半导体

DS1250BL

4096K Nonvolatile SRAM

DESCRIPTION TheDS12504096KNonvolatileSRAMsare4,194,304–bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亚德诺亚德诺半导体

DS1250BL-100

4096K Nonvolatile SRAM

DESCRIPTION TheDS12504096KNonvolatileSRAMsare4,194,304–bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亚德诺亚德诺半导体

DS1250BL-100-IND

4096K Nonvolatile SRAM

DESCRIPTION TheDS12504096KNonvolatileSRAMsare4,194,304–bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亚德诺亚德诺半导体

DS1250BL-70

4096K Nonvolatile SRAM

DESCRIPTION TheDS12504096KNonvolatileSRAMsare4,194,304–bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亚德诺亚德诺半导体

详细参数

  • 型号:

    DS125

  • 功能描述:

    NVRAM 4096K NV SRAM

  • RoHS:

  • 制造商:

    Maxim Integrated

  • 数据总线宽度:

    8 bit

  • 存储容量:

    1024 Kbit

  • 组织:

    128 K x 8

  • 接口类型:

    Parallel

  • 访问时间:

    70 ns

  • 电源电压-最大:

    5.5 V

  • 电源电压-最小:

    4.5 V

  • 工作电流:

    85 mA

  • 最大工作温度:

    + 70 C

  • 最小工作温度:

    0 C

  • 封装/箱体:

    EDIP

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
DAL
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
询价
DALLAS
23+
SOP-16
2800
绝对全新原装!现货!特价!请放心订购!
询价
TI/NS
17+
QFN54
6200
100%原装正品现货
询价
TI/NS
2020+
QFN54
14
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
DALLAS
05+
SOP/16
5
全新原装 绝对有货
询价
DALLAS
15+
DIP16
11560
全新原装,现货库存,长期供应
询价
DALLAS
23+
SOP
9896
询价
DALLAS
24+
SMD
193
现货
询价
DALLAS
24+
SOP-16
5645
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
MAX/DALL
24+
原厂封装
4612
原装现货假一罚十
询价
更多DS125供应商 更新时间2025-7-12 14:37:00