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首页 >DS1249>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
DS1249AB	文件：153.85 Kbytes Page：8 Pages	2048k Nonvolatile SRAM DESCRIPTION The DS1249 2048k Nonvolatile SRAMs are 2,097,152-bit, fully static, nonvolatile SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit 文件：153.85 Kbytes 页数：8 Pages	Dallas	Dallas
DS1249AB100	文件：153.85 Kbytes Page：8 Pages	2048k Nonvolatile SRAM DESCRIPTION The DS1249 2048k Nonvolatile SRAMs are 2,097,152-bit, fully static, nonvolatile SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit 文件：153.85 Kbytes 页数：8 Pages	Dallas	Dallas
DS1249AB-100	文件：153.85 Kbytes Page：8 Pages	2048k Nonvolatile SRAM DESCRIPTION The DS1249 2048k Nonvolatile SRAMs are 2,097,152-bit, fully static, nonvolatile SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit 文件：153.85 Kbytes 页数：8 Pages	Dallas	Dallas
DS1249AB70	文件：153.85 Kbytes Page：8 Pages	2048k Nonvolatile SRAM DESCRIPTION The DS1249 2048k Nonvolatile SRAMs are 2,097,152-bit, fully static, nonvolatile SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit 文件：153.85 Kbytes 页数：8 Pages	Dallas	Dallas
DS1249W	文件：157.47 Kbytes Page：8 Pages	3.3V 2048kb Nonvolatile SRAM DESCRIPTION The DS1249W 2048kb nonvolatile (NV) SRAMs are 2,097,152-bit, fully static, NV SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition 文件：157.47 Kbytes 页数：8 Pages	Dallas	Dallas
DS1249W	文件：16.18 Kbytes Page：6 Pages	module device DS1249W RELIABILITY REPORT DESCRIPTION The DS1249W 2048kb nonvolatile (NV) SRAMs are 2,097,152-bit, fully static, NV SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition 文件：16.18 Kbytes 页数：6 Pages	Maxim 美信	Maxim
DS1249W-100	文件：157.47 Kbytes Page：8 Pages	3.3V 2048kb Nonvolatile SRAM DESCRIPTION The DS1249W 2048kb nonvolatile (NV) SRAMs are 2,097,152-bit, fully static, NV SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition 文件：157.47 Kbytes 页数：8 Pages	Dallas	Dallas
DS1249W-100-IND	文件：157.47 Kbytes Page：8 Pages	3.3V 2048kb Nonvolatile SRAM DESCRIPTION The DS1249W 2048kb nonvolatile (NV) SRAMs are 2,097,152-bit, fully static, NV SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition 文件：157.47 Kbytes 页数：8 Pages	Dallas	Dallas
DS1249W-150	文件：157.47 Kbytes Page：8 Pages	3.3V 2048kb Nonvolatile SRAM DESCRIPTION The DS1249W 2048kb nonvolatile (NV) SRAMs are 2,097,152-bit, fully static, NV SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition 文件：157.47 Kbytes 页数：8 Pages	Dallas	Dallas
DS1249W-150-IND	文件：157.47 Kbytes Page：8 Pages	3.3V 2048kb Nonvolatile SRAM DESCRIPTION The DS1249W 2048kb nonvolatile (NV) SRAMs are 2,097,152-bit, fully static, NV SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition 文件：157.47 Kbytes 页数：8 Pages	Dallas	Dallas

技术参数

Memory Type：
NV SRAM
Memory Size：
256K x 8
Bus Type：
Parallel
VSUPPLY(V)：
3.6
Package/Pins：
EDIP/32/
BudgetaryPrice：
$30.65 @1k

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市星佑电子有限公司	DS1249W	DALLAS	05+		1000	自己公司全新库存绝对有货	询价
深圳市赛尔通科技有限公司	DS1249W	DALLAS	23+	DIP32	65480		询价
深圳市安富世纪电子有限公司	DS1249W	DALLAS	23+	原厂正规渠道	5000	专注配单,只做原装进口现货	询价
深圳市一线半导体有限公司	DS1249WP	DALLAS	24+	DIP-32	1400		询价
齐创科技(上海,北京,青岛)有限公司	DS1249WP	DS	23+	DIP	5000	原装正品,假一罚十	询价
深圳市粤科源兴科技有限公司	DS1249W-150	MAXIM	13+	MOD	3738	原装分销	询价
谛辉(北京/上海/青岛 )电子科技有限公司	DS1249W-100		25+	DIP-16P	18000	原厂直接发货进口原装	询价
深圳市振宏微科技有限公司	DS1249W-150	MAXIM	23+	MOD	8888	专做原装正品,假一罚百!	询价
瀚佳科技(深圳)有限公司	DS1249W-100IND	Maxim Integrated	24+	32-EDIP	56200	一级代理/放心采购	询价
深圳市艾宇欣科技有限公司	DS1249W-100	Maxim	1931+	N/A	567	加我qq或微信，了解更多详细信息,体验一站式购物	询价

更多DS1249供应商更新时间2025-11-20 14:59:00

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