module device DS1249W RELIABILITY REPORT

DESCRIPTION The DS1249W 2048kb nonvolatile (NV) SRAMs are 2,097,152-bit, fully static, NV SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition

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Maxim

美信

3.3V 2048kb Nonvolatile SRAM

DESCRIPTION The DS1249W 2048kb nonvolatile (NV) SRAMs are 2,097,152-bit, fully static, NV SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition

文件：157.47 Kbytes 页数：8 Pages

Dallas

3.3V 2048kb Nonvolatile SRAM

DESCRIPTION The DS1249W 2048kb nonvolatile (NV) SRAMs are 2,097,152-bit, fully static, NV SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition

文件：157.47 Kbytes 页数：8 Pages

Dallas

3.3V 2048kb Nonvolatile SRAM

DESCRIPTION The DS1249W 2048kb nonvolatile (NV) SRAMs are 2,097,152-bit, fully static, NV SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition

文件：157.47 Kbytes 页数：8 Pages

Dallas

3.3V 2048kb Nonvolatile SRAM

DESCRIPTION The DS1249W 2048kb nonvolatile (NV) SRAMs are 2,097,152-bit, fully static, NV SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition

文件：157.47 Kbytes 页数：8 Pages

Dallas

3.3V 2048kb Nonvolatile SRAM

DESCRIPTION The DS1249W 2048kb nonvolatile (NV) SRAMs are 2,097,152-bit, fully static, NV SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition

文件：157.47 Kbytes 页数：8 Pages

Dallas

3.3V 2048kb Nonvolatile SRAM

文件：211.29 Kbytes 页数：8 Pages

Dallas

3.3V 2048kb Nonvolatile SRAM

文件：211.29 Kbytes 页数：8 Pages

Dallas

3.3V 2048kb Nonvolatile SRAM

文件：211.29 Kbytes 页数：8 Pages

Dallas

3.3V、2048kb非易失SRAM

DS1249W 2048kb非易失(NV) SRAM为2,097,152位、全静态NV SRAM，按照8位、262,144字排列。每个NV SRAM均自带锂电池及控制电路，控制电路连续监视VCC是否超出容差范围，一旦超出容差范围，锂电池便自动切换至供电状态、写保护将无条件使能、防止数据被破坏。该器件没有写次数限制，可直接与微处理器接口、不需要额外的支持电路。 • 在没有外部电源的情况下最少可以保存数据10年 \n• 掉电期间数据被自动保护 \n• 没有写次数限制 \n• 低功耗CMOS操作 \n• 100ns的读写存取时间 \n• 第一次上电前，锂电池与电路断开、维持保鲜状态 \n• 可选的-40°C至+85°C工业级温度范围，指定为IND \n• JEDEC标准的32引脚DIP封装;

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