DS1230AB-100IND资料datasheet下载供应商报价-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
DS1230AB-100IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 页数：12 Pages	DALLAS	DALLAS
DS1230AB-100	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 页数：12 Pages	DALLAS	DALLAS
DS1230AB-120+	文件：0 bytes Page：0 Pages	DIP-28	ADI(亚德诺)/MAXIM(美信) 上传：深圳市宇创芯科技有限公司	ADI(亚德诺)/MAXIM(美信)
DS1230AB-120IND+	文件：0 bytes Page：0 Pages	DIP-28	ADI(亚德诺)/MAXIM(美信) 上传：深圳市宇创芯科技有限公司	ADI(亚德诺)/MAXIM(美信)
DS1230AB-150+	文件：0 bytes Page：0 Pages	DIP-28	ADI(亚德诺)/MAXIM(美信) 上传：深圳市宇创芯科技有限公司	ADI(亚德诺)/MAXIM(美信)

更多DS1230AB-100IND供应商更新时间2026-1-31 16:30:00