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DS1230Y_10

256k Nonvolatile SRAM

文件:222.21 Kbytes 页数:10 Pages

Dallas

DS1230Y-100

256k Nonvolatile SRAM

DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio

文件:213.86 Kbytes 页数:12 Pages

Dallas

DS1230Y-100IND

256k Nonvolatile SRAM

DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio

文件:213.86 Kbytes 页数:12 Pages

Dallas

DS1230Y-100-IND

256k Nonvolatile SRAM

DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio

文件:213.86 Kbytes 页数:12 Pages

Dallas

DS1230Y-100

Package:28-DIP 模块(0.600",15.24mm);包装:管件 类别:集成电路(IC) 存储器 描述:IC NVSRAM 256KBIT PAR 28EDIP

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亚德诺

DS1230Y-100+

Package:28-DIP 模块(0.600",15.24mm);包装:管件 类别:集成电路(IC) 存储器 描述:IC NVSRAM 256KBIT PAR 28EDIP

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亚德诺

详细参数

  • 型号:

    DS1230Y_10

  • 制造商:

    DALLAS

  • 制造商全称:

    Dallas Semiconductor

  • 功能描述:

    256k Nonvolatile SRAM

供应商型号品牌批号封装库存备注价格
MAXIM
13+
MOD
3738
原装分销
询价
DALLAS
23+
DIP
3359
全新进口原装现货,价优
询价
25+
DIP
18000
原厂直接发货进口原装
询价
DALLAS
05+
17
自己公司全新库存绝对有货
询价
DALLAS
25+
DIP
1
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
DAL
24+
362
询价
DALLAS
DIP
453
正品原装--自家现货-实单可谈
询价
DALLAS
17+
DIP
6200
100%原装正品现货
询价
DALLAS
23+
DIP28
5000
原装正品,假一罚十
询价
DALLAS
24+
原厂封装
1440
原装现货假一罚十
询价
更多DS1230Y_10供应商 更新时间2025-12-10 9:01:00