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型号	下载订购	功能描述	制造商上传企业	LOGO
DS1230AB-100	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 页数：12 Pages	Dallas	Dallas
DS1230AB-100IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 页数：12 Pages	Dallas	Dallas
DS1230AB-100-IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 页数：12 Pages	Dallas	Dallas
DS1230AB-120	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 页数：12 Pages	Dallas	Dallas
DS1230AB-120IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 页数：12 Pages	Dallas	Dallas
DS1230AB-120-IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 页数：12 Pages	Dallas	Dallas
DS1230AB-150	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 页数：12 Pages	Dallas	Dallas
DS1230AB-150IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 页数：12 Pages	Dallas	Dallas
DS1230AB-150-IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 页数：12 Pages	Dallas	Dallas
DS1230AB-200	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 页数：12 Pages	Dallas	Dallas

技术参数

Memory Type：
NV SRAM
Memory Size：
32K x 8
Bus Type：
Parallel
Features：
DIP with Internal Battery
VSUPPLY (min)(V)：
3
VSUPPLY (max)(V)：
3.6
RoHS Available：
See Data Sheet
Oper. Temp.(°C)：
-40 to +85
Package/ Pins：
MOD/28
Smallest Available Pckg. (max w/pins)(mm2)：
629.9
Budgetary Price (See Notes)：
$14.39 @1k

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市星佑电子有限公司	DS1230W	DALLAS	05+		1000	全新原装绝对有货	询价
齐创科技(上海,北京,青岛)有限公司	DS1230W	DS	23+	DIP	5000	原装正品,假一罚十	询价
深圳市赛尔通科技有限公司	DS1230W	DALLAS	23+	DIP28	65480		询价
深圳市能元时代电子有限公司	DS1230W	DS	23+	DIP	35516	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
上海凌岳电子科技有限公司（上海涵恩科技）	DS1230W		2023+		3000	进口原装现货	询价
深圳市安富世纪电子有限公司	DS1230W	DS	23+	原厂正规渠道	5000	专注配单,只做原装进口现货	询价
深圳市科达星科技有限公司	DS1230W	DALLAS	24+	DIP-28	37500	全新原装现货,量大价优!	询价
深圳市富芯乐电子科技有限公司	DS1230W	DALLAS	24+	NA	7500	只做原装正品现货欢迎来电查询15919825718	询价
深圳市粤科源兴科技有限公司	DS1230WP-100IND+	MAXIM	13+	PWRCP	3758	原装分销	询价
谛辉(北京/上海/青岛 )电子科技有限公司	DS1230W-120		25+	DIP	18000	原厂直接发货进口原装	询价

更多DS1230供应商更新时间2025-10-5 9:16:00

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