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DMN62D0U

丝印:LWW;Package:SOT363;60V Dual N-Channel Enhancement Mode MOSFET

Features Fastswitching GreenDeviceAvailable Suitfor1.5VGateDriveApplications

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

DMN62D0U

N-CHANNEL ENHANCEMENT MODE MOSFET; Low On-Resistance\nLow Input Capacitance\nFast Switching Speed\nLow Input/Output Leakage\nESD Protected Up To 1kV;

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

DiodesDiodes Incorporated

美台半导体

DMN62D0U

N-CHANNEL ENHANCEMENT MODE MOSFET

DIODESDiodes Incorporated

美台半导体

DMN62D0U

N-CHANNEL ENHANCEMENT MODE MOSFET

DIODESDiodes Incorporated

美台半导体

DMN62D0UDW

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET; Dual N-Channel MOSFET\nLow On-Resistance\nLow Gate Threshold Voltage\nLow Input Capacitance\nFast Switching Speed\nLow Input/Output Leakage\nUltra-Small Surface Mount Package\nESD Protected Gate;

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

DiodesDiodes Incorporated

美台半导体

DMN62D0UDWQ

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAnti

DIODESDiodes Incorporated

美台半导体

DMN62D0UDWQ-13

丝印:LEE;Package:SOT363;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAnti

DIODESDiodes Incorporated

美台半导体

DMN62D0UDWQ-7

丝印:LEE;Package:SOT363;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAnti

DIODESDiodes Incorporated

美台半导体

DMN62D0UT

N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance:RDS(ON) LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtectedUpTo1kV TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomo

DIODESDiodes Incorporated

美台半导体

DMN62D0UT-13

丝印:TK9;Package:SOT523;N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance:RDS(ON) LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtectedUpTo1kV TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomo

DIODESDiodes Incorporated

美台半导体

技术参数

  • Automotive Compliant PPAP:

    No

  • Polarity:

    N

  • ESD Diodes:

    Yes

  • VDS:

    60 V

  • VGS:

    20 ±V

  • IDS @ TA = +25°C:

    0.38 A

  • PD @ TA = +25°C:

    0.59 W

  • RDS(ON) Max @ VGS (10V):

    N/A mΩ

  • RDS(ON) Max @ VGS (4.5V):

    2000 mΩ

  • RDS(ON) Max @ VGS (2.5V):

    2500 mΩ

  • RDS(ON) Max @ VGS (1.8V):

    3000 mΩ

  • VGS (th) Max:

    1 V

  • QG Typ @ VGS = 4.5V (nC):

    0.5 nC

  • QG Typ @ VGS = 10V (nC):

    N/A nC

  • Packages:

    SOT23

供应商型号品牌批号封装库存备注价格
DIODES/美台
22+
SOT23
90000
正规代理渠道假一赔十
询价
DIODES/美台
2447
SOT23
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
Diodes(美台)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
24+
N/A
64000
一级代理-主营优势-实惠价格-不悔选择
询价
TECH PUBLIC
24+
con
2500
优势库存,原装正品
询价
TECH PUBLIC(台舟)
23+
SOT-23
6840
三极管/MOS管/晶体管 > 场效应管(MOSFET)
询价
Diodes(美台)
2021/2022+
标准封装
12000
原厂原装现货订货价格优势终端BOM表可配单提供样品
询价
Diodes(美台)
2511
标准封装
12000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
询价
DIODES/美台
19+
SOT-323
12600
原装正品现货,可开发票,假一赔十
询价
DIODES/美台
20+
SMD
88800
DIODES原装优势主营型号-可开原型号增税票
询价
更多DMN62D0U供应商 更新时间2025-7-29 12:20:00