50V N-Channel Enhancement Mode MOSFET

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: general-purpose interfacing switches and power-management functions.\n\n • Low On-Resistance\n• Low Input Capacitance\n• Low Input/Output Leakage\n• ESD Protected;

Diodes

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50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Very Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive appl

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DIODES

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50V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage, 1.0V Max  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Haloge

文件：943.83 Kbytes 页数：8 Pages

DIODES

美台半导体

50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage, 1.0V Max  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Haloge

文件：588.98 Kbytes 页数：8 Pages

DIODES

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