DMN52D0UV中文资料美台半导体数据手册PDF规格书

特性 Features

 Dual N Channel MOSFET

 Low On-Resistance

 Very Low Gate Threshold Voltage, 1.0V Max

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 Ultra-Small Surface Mount Package

 ESD Protected

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 For automotive applications requiring specific change control

(i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable,

and manufactured in IATF 16949 certified facilities), please

contact us or your local Diodes representative.