N-CHANNEL ENHANCEMENT MODE MOSFET

Features  CSP with Footprint 6mm × 2.5mm  Height = 0.18mm (Typical) for Low Profile  ESD Protection of Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.

文件：445.61 Kbytes 页数：7 Pages

DIODES

美台半导体

N-Channel Enhancement Mode MOSFET

This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.  \n\n

Diodes

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features  CSP with Footprint 6mm × 2.5mm  Height = 0.18mm (Typical) for Low Profile  ESD Protection of Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.

文件：445.61 Kbytes 页数：7 Pages

DIODES

美台半导体

SOT23

DIODES

美台半导体

上传：深圳市恒诺芯科技有限公司

SOT-23-3

DIODES/美台

上传：深圳市天卓伟业电子有限公司