| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
丝印：MN7；Package：SOT23；N-Channel Enhancement Mode MOSFET Features ® Vos =30Vio = 2A Rosin 文件：912.17 Kbytes 页数：3 Pages | TECHPUBLIC 台舟电子 | TECHPUBLIC | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance: ◾ 57mΩ @ VGS = 10V ◾ 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device ( 文件：185.07 Kbytes 页数：4 Pages | DIODES 美台半导体 | DIODES | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q101 Standards for High 文件：144.85 Kbytes 页数：2 Pages | ZPSEMIZP Semiconductor 至尚臻品 | ZPSEMI | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance: ◾ 57mΩ @ VGS = 10V ◾ 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device ( 文件：185.07 Kbytes 页数：4 Pages | DIODES 美台半导体 | DIODES | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q101 Standards for High 文件：144.85 Kbytes 页数：2 Pages | ZPSEMIZP Semiconductor 至尚臻品 | ZPSEMI | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q101 Standards for High 文件：144.85 Kbytes 页数：2 Pages | ZPSEMIZP Semiconductor 至尚臻品 | ZPSEMI | ||
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance • 57mΩ @ VGS = 10V • 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • Green Device (Note 4) • Qualified to AEC-Q101 Standards for Hi 文件：194.07 Kbytes 页数：4 Pages | DIODES 美台半导体 | DIODES | ||
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance • 57mΩ @ VGS = 10V • 112mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • Green Device (Note 4) • Qualified to AEC-Q101 Standards for Hi 文件：194.07 Kbytes 页数：4 Pages | DIODES 美台半导体 | DIODES | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input 文件：118.2 Kbytes 页数：4 Pages | DIODES 美台半导体 | DIODES | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input 文件：118.2 Kbytes 页数：4 Pages | DIODES 美台半导体 | DIODES |
技术参数
- Automotive Compliant PPAP：
On Request*
- Polarity：
N
- ESD Diodes：
Yes
- VDS：
30 V
- VGS：
8 ±V
- IDS @ TA = +25°C：
3.2 A
- PD @ TA = +25°C：
0.9 W
- RDS(ON) Max @ VGS (10V)：
N/A mΩ
- RDS(ON) Max @ VGS (4.5V)：
60 mΩ
- RDS(ON) Max @ VGS (2.5V)：
80 mΩ
- RDS(ON) Max @ VGS (1.8V)：
130 mΩ
- VGS (th) Max：
1 V
- QG Typ @ VGS = 4.5V (nC)：
N/A nC
- QG Typ @ VGS = 10V (nC)：
N/A nC
- Packages：
SOT26 (SC74R)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES |
25+ |
SOT26 |
18600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
DIODES/美台 |
2447 |
SOT26 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
DIODES/美台 |
23+ |
SOT26(SC74R) |
12000 |
原装正品假一罚百!可开增票! |
询价 | ||
DIODES/美台 |
22+ |
SOT26(SC74R) |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
询价 | ||
DIODES |
2015+ |
SOT23-6 |
995300 |
原装现货价格优势-含16%增值税 |
询价 | ||
Diodes |
24+ |
SOT-26 |
7500 |
询价 | |||
DIODES |
2016+ |
SOT163 |
28948 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
DIODES |
23+ |
SOT23-6 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
DIODES |
20+ |
SOT163 |
32970 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
DIODES |
25+ |
SOT-26 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 |
相关规格书
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- MAX232
- MAX232
- MAX232E
- MAX2325
- MAX2324
- MAX2321
- MAX2322
- MAX2320
- MAX232E-TD
- MAX232CPE
- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
- SI7973DP
- SI7949DP
- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- MPC8540PX833LC
- TD62308BFG
- TD62308BP1G
- TD62308BF
- TL074
- TL074
相关库存
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
- MAX232
- MAX232
- MAX232
- MAX232A
- MAX2323
- MAX2326
- MAX2327
- MAX232E
- MAX232E
- MAX232ESE
- NE5533
- SI7970DP
- SI7958DP
- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308
- TD62308APG
- TD62308AFG
- GRM21BR71H104JA11#
- TL074
- TL074
