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DMN2013UFDEQ

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2013UFDEQ is suitable for automotive

文件:532.33 Kbytes 页数:8 Pages

DIODES

美台半导体

DMN2013UFDEQ-13

丝印:N6;Package:U-DFN2020-6;20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2013UFDEQ is suitable for automotive

文件:532.33 Kbytes 页数:8 Pages

DIODES

美台半导体

DMN2013UFDEQ-7

丝印:N6;Package:U-DFN2020-6;20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2013UFDEQ is suitable for automotive

文件:532.33 Kbytes 页数:8 Pages

DIODES

美台半导体

DMN2013UFDEQ-13

20V N-CHANNEL ENHANCEMENT MODE MOSFET

文件:293.96 Kbytes 页数:6 Pages

DIODES

美台半导体

DMN2013UFDEQ-7

20V N-CHANNEL ENHANCEMENT MODE MOSFET

文件:293.96 Kbytes 页数:6 Pages

DIODES

美台半导体

DMN2013UFDEQ

20V N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. •0.6mm Profile – Ideal for Low Profile Applications\n•PCB Footprint of 4mm2\n•Low Gate Threshold Voltage\n•ESD Protected Gate\n•Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)\n•Halogen and Antimony Free. “Green” Device (Note 3)\n•The DMN2013UFDEQ is suitable for automotive applications requi;

Diodes

美台半导体

技术参数

  • Automotive Compliant PPAP:

    Yes

  • Polarity:

    N

  • ESD Diodes:

    No

  • VDS:

    20 V

  • VGS:

    8 ±V

  • IDS @ TA = +25°C:

    10.5 A

  • PD @ TA = +25°C:

    1.31 W

  • RDS(ON) Max @ VGS (10V):

    N/A mΩ

  • RDS(ON) Max @ VGS (4.5V):

    11 mΩ

  • RDS(ON) Max @ VGS (2.5V):

    13 mΩ

  • RDS(ON) Max @ VGS (1.8V):

    30 mΩ

  • VGS (th) Max:

    1.1 V

  • QG Typ @ VGS = 4.5V (nC):

    14.3 nC

  • QG Typ @ VGS = 10V (nC):

    N/A nC

  • Packages:

    U-DFN2020-6

供应商型号品牌批号封装库存备注价格
NK/南科功率
2025+
DFN22-6L
986966
国产
询价
DIODES/美台
23+
NA
6000
原装正品假一罚百!可开增票!
询价
DIODES/美台
23+
U-DFN2020
50000
全新原装正品现货,支持订货
询价
DIODES/美台
20+
DFN2020-6
120000
只做原装 可免费提供样品
询价
DIODES
1505+
DFN
3000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
DIODES/美台
22
UDFN20206
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
询价
DIODES
23+
DFN
48000
全新原装正品现货,支持订货
询价
DIODES/美台
2026+
U-DFN2020
45000
原装正品,假一罚十!
询价
DIODES/美台
25+
U-DFN2020
45000
原装正品,假一罚十!
询价
DIODES/美台
2511
DFN2020-6
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
询价
更多DMN2013UFDEQ供应商 更新时间2026-1-28 14:01:00