N-CHANNEL ENHANCEMENT MODE MOSFET

文件：542.58 Kbytes 页数：7 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：542.58 Kbytes 页数：7 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation Mix-MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Low Gate Charge\nRDS(ON): 350mΩ @ VGS = 4.5V(Single MOSFET)\n8 N-Channel MOSFET in 1 Device\nCommon Source \nSmall Footprint 1.5mm × 1.5mm;

Diodes

美台半导体

4096k Nonvolatile SRAM

DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such

文件：217.62 Kbytes 页数：11 Pages

DALLAS

4096k Nonvolatile SRAM

文件：242.48 Kbytes 页数：10 Pages

MAXIM

美信

4096K Nonvolatile SRAM

DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit

文件：181.99 Kbytes 页数：9 Pages

DALLAS