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DMN1054UCB4中文资料N-CHANNEL ENHANCEMENT MODE MOSFET数据手册Diodes规格书
DMN1054UCB4规格书详情
描述 Description
This 3rd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(on) per footprint area.
特性 Features
LD-MOS Technology with the Lowest Figure of Merit:
RDS(on) = 37mΩ to Minimize On-State Losses
Qg = 7.5nC for Ultra-Fast Switching
Vgs(th) = 0.6V typ. for a Low Turn-On Potential
CSP with Footprint 0.8mm × 0.8mm
Height = 0.35mm for Low Profile
应用 Application
DC-DC Converters
Battery Management
Load Switch
技术参数
- 制造商编号
：DMN1054UCB4
- 生产厂家
：Diodes
- Automotive Compliant PPAP
：No
- Polarity
：N
- ESD Diodes
：No
- VDS
：8 V
- VGS
：5 ±V
- IDS @ TA = +25°C
：4 A
- PD @ TA = +25°C
：1.34 W
- RDS(ON) Max @ VGS (10V)
：N/A mΩ
- RDS(ON) Max @ VGS (4.5V)
：N/A mΩ
- RDS(ON) Max @ VGS (2.5V)
：50 mΩ
- RDS(ON) Max @ VGS (1.8V)
：N/A mΩ
- VGS (th) Max
：N/A V
- QG Typ @ VGS = 4.5V (nC)
：N/A nC
- QG Typ @ VGS = 10V (nC)
：N/A nC
- Packages
：X1-WLB0808-4
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES |
24+ |
WLB0808-4 |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 | ||
DIODES/美台 |
23+ |
NA |
12730 |
原装正品代理渠道价格优势 |
询价 | ||
DIODES |
24+ |
WLB0808-4 |
8000 |
新到现货，只做全新原装正品 |
询价 | ||
DIODES |
23+ |
WLB0808-4 |
120400 |
全新原装正品现货,支持订货 |
询价 | ||
24+ |
N/A |
72000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
DIODES |
23+ |
WLB0808-4 |
180000 |
正规渠道,只有原装! |
询价 | ||
DIODES/美台 |
23+ |
X1-WLB0808-4 |
12000 |
原装正品假一罚百!可开增票! |
询价 | ||
DIODES/美台 |
24+ |
SMD |
60000 |
询价 | |||
DIODES |
24+ |
WLB0808-4 |
5000 |
全新原装正品,现货销售 |
询价 | ||
DIODES/美台 |
22+ |
X1-WLB0808-4 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
询价 |
