N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output

文件：194.12 Kbytes 页数：6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output

文件：194.12 Kbytes 页数：6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output

文件：194.12 Kbytes 页数：6 Pages

DIODES

美台半导体

Low Pass Filters

文件：23.47 Kbytes 页数：1 Pages

RHOMBUS-IND

N-Channel Enhancement Mode

Features • VDS (V) = 20V • ID = 4.2A (VGS=4.5V) • RDS(ON)

文件：53.51 Kbytes 页数：2 Pages

KEXIN

科信电子

Advanced high cell denity trench technology for ultra RDS(ON)

文件：256.37 Kbytes 页数：4 Pages

KERSEMI