HALF- BRIDGE GATE DRIVER IN SO-14

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DIODES

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HALF-BRIDGE GATE DRIVER

文件：637.37 Kbytes 页数：12 Pages

DIODES

美台半导体

HALF- BRIDGE GATE DRIVER IN SO-14

文件：777.7 Kbytes 页数：12 Pages

DIODES

美台半导体

HALF BRIDGE GATE DRIVER

文件：652.66 Kbytes 页数：12 Pages

DIODES

美台半导体

HALF BRIDGE GATE DRIVER IN SO-8

文件：734.33 Kbytes 页数：12 Pages

DIODES

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HALF BRIDGE GATE DRIVER IN SO-14

The DGD21844M is a high voltage / high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High-voltage processing techniques enable the DGD21844M’s highside to switch to 600V in a bootstrap operation.The DGD21844M logic inputs are compatible with standar •Floating High-side Driver in Bootstrap Operation to 600V\n•1.4A Source / 1.8A Sink Output Current Capability\n•Programmable Dead Time to Protect MOSFETs\n•Wide Logic Supply Voltage Offset Voltage: -5V to 5V\n•Schmitt Triggered Logic Inputs with Internal Pull Down\n•Extended Temperature Range: -40°C;

Diodes

美台半导体

HALF BRIDGE GATE DRIVER IN SO-8

The DGD2184M is a high voltage / high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High-voltage processing techniques enable the DGD2184M’s highside to switch to 600V in a bootstrap operation.The DGD2184M logic inputs are compatible with standard T •Floating High-side Driver in Bootstrap Operation to 600V\n•1.4A Source / 1.8A Sink Output Current Capability\n•Internal Dead Time of 395ns to Protect MOSFETs\n•Logic Input (IN and SD*) 3.3V Capability\n•Undervoltage Lockout for High and Low Side Drivers\n•Totally Lead-Free & Fully RoHS Compliant (N;

Diodes

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Package：14-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 14SO

PAM

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Package：8-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 8SO

PAM

龙鼎微

Package：8-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 8SO

PAM

龙鼎微